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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220C package *Complement to type TIP42/42A/42B/42C APPLICATIONS *For medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP41/41A/41B/41C ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP41 VCBO Collector-base voltage TIP41A TIP41B TIP41C TIP41 VCEO Collector-emitter voltage TIP41A TIP41B TIP41C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 100 40 60 80 100 5 6 10 2 65 2 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP41 TIP41A IC=30mA; IB=0 TIP41B TIP41C VCE(sat) VBE Collector-emitter saturation voltage Base-emitter on voltage TIP41 TIP41A TIP41B TIP41C TIP41/41A TIP41B/41C IC=6A; IB=0.6A IC=6A ; VCE=4V VCE=40V; VEB=0 VCE=60V; VEB=0 CONDITIONS TIP41/41A/41B/41C SYMBOL MIN 40 60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 80 100 1.5 2.0 V V ICES Collector cut-off current 0.4 VCE=80V; VEB=0 VCE=100V; VEB=0 VCE=30V; IB=0 0.7 VCE=60V; IB=0 VEB=5V; IC=0 IC=0.3A ; VCE=4V IC=3A ; VCE=4V IC=0.5A ; VCE=10V 30 15 3 75 1.0 mA ICEO Collector cut-off current mA IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE TIP41/41A/41B/41C Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors TIP41/41A/41B/41C 4 |
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