Part Number Hot Search : 
C4245 BUZ16 RXXP12D BUL62A MICON TA1286A PFZ180A 14014
Product Description
Full Text Search
 

To Download 2SB1156 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1156
DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER

HAN INC
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak
Collector-base voltage
SEM GE
Open base
CONDITIONS
Open emitter
OND IC
TOR UC
VALUE -130 -80 -7 -20 -30
UNIT V V V A A
Open collector
Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature
3 W 100 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1156
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current CONDITIONS IC=-10mA ;IB=0 IC=-8A ;IB=-0.4A IC=-20A ;IB=-2A IC=-8A ;IB=-0.4A IC=-20A ;IB=-2A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V 45 MIN -80 -0.5 -1.5 -1.5 -2.5 -10 -50 |I |I TYP. MAX UNIT V V V V V A A
SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE -1 hFE -2 hFE -3 fT
DC current gain DC current gain DC current gain

Transition frequency
Switching times ton tstg tf
ANG INCH
EMIC ES
IC=-10A ; VCE=-2V IC=-0.5A ; VCE=-10V
OND
60
TOR UC
260 25 MHz
30
Turn-on time Storage time Fall time VCC=-50V; IC=-3A;IB1=-0.8A ,IB2=0.8A
0.5 1.2 0.2 |I |I
|I
s s s
hFE-2 classifications R 60-120 Q 90-180 P 130-260
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1156
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.30mm)
3


▲Up To Search▲   

 
Price & Availability of 2SB1156

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X