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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1158 DESCRIPTION With TO-3PFa package Complement to type 2SD1713 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -120 -120 -5 -6 -10 UNIT V V V A A TC=25ae PC Ta=25ae Tj Tstg Junction temperature Storage temperature 70 W 3 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance CONDITIONS IC=-4A ;IB=-0.4A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 60 20 180 MIN TYP. 2SB1158 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT MAX -2.0 -1.8 -50 -50 UNIT V V |I |I A A 200 Transition frequency S P 80-160 100-200 pF MHz hFE-2 classifications Q 60-120 HAN INC SEM GE OND IC TOR UC 20 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1158 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
Price & Availability of 2SB1158
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