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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1576 DESCRIPTION *With TO-3 package *High voltage,high speed APPLICATIONS *For high voltage ,fast switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC.25 Open emitter Open base Open collector CONDITIONS VALUE 450 330 7 8 100 200 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ; IB=0 IE=1mA ; IC=0 IC=5A; IB=0.8A IC=5A; IB=0.8A VCB=450V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V 30 MIN 330 7 2SC1576 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 1.5 1.8 0.1 0.1 150 V V mA mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1576 Fig.2 Outline dimensions 3 |
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