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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4008 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) *Wide Area of Safe Operation *Complement to Type 2SA1635 APPLICATIONS *Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 100 V 80 V 6 V 4 A 6 A 30 W .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 2 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 50A; IE= 0 IC= 25mA; IB= 0 IE= 50A; IC= 0 IC= 2A; IB= 0.2A B 2SC4008 MIN 100 80 6 TYP. MAX UNIT V V V 1.0 1.5 10 10 500 10 60 V V A A IC= 2A; IB= 0.2A B VCB= 100V; IE= 0 VEB= 6V; IC= 0 Current-Gain--Bandwidth Product Output Capacitance hFE classifications E 100-200 F 160-320 w w G 250-500 scs .i w IC= 1A ; VCE= 4V IE= -0.2A ; VCE= 12V IE=0 ; VCB= 10V; ftest= 1MHz .cn mi e 100 MHz pF isc Websitewww.iscsemi.cn 2 |
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