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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
*Wit
DESCRIPTION h TO-220 package *Low collector saturation voltage APPLICATIONS *TV horizontal deflection output,
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector current-surge Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 150 6 7 10 20 40 150 -55~150 V A A A W Open emitter 350 120 V CONDITIONS VALUE 300 V UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SD1163 IC=10mA ;RBE=: 2SD1163A IE=10mA ;IC=0 150 6 2.0 IC=5A, IB=0.5A 2SD1163A IC=5A, IB=0.5A VCB=300V;IE=0 VCB=350V;IE=0 IC=5A ; VCE=5V 25 1.0 1.2 5 5 V mA mA V V CONDITIONS MIN 120 V TYP MAX UNIT
SYMBOL
V(BR)CEO
Collector-emitter breakdown voltage
V(BR)EBO
Emitter-base breakdown voltage 2SD1163
VCEsat
Collector-emitter saturation voltage
VBEsat
Base-emitter saturation voltage 2SD1163 2SD1163A
ICBO
Collector cut-offcurrent
hFE
DC current gain
Switching times tf Fall time ICM=3.5A;IB1 =0.45A 0.5 s
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1163,2SD1163A
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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