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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1667 DESCRIPTION With TO-220F package Complement to type 2SB1134 Low collector saturation voltage APPLICATIONS Relay drivers,high-speed inverters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base OND IC CONDITIONS TOR UC MAX 60 50 6 5 9 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current-peak Ta=25ae 2 W 25 150 -55~150 ae ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=1mA ;RBE= IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=5V 70 30 MIN 50 60 6 2SD1667 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V V 0.4 100 100 280 |I |I V A A Transition frequency Switching times ton ts tf CHA IN Turn-on time Storage time Fall time E SEM NG OND IC TOR UC 100 30 0.1 |I |I |I pF MHz s s s IC=2.0A; IB1=-IB2=0.2A VCC=20V;R=10| 1.4 0.2 hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1667 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1667 CHA IN E SEM NG OND IC TOR UC 4 |
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