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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *Complement to type MJ4502 *Excellent safe operating area APPLICATIONS *For use as an output device in complementary audio amplifiers to 100-Watts music power per channel PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION MJ802 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 90 4 30 7.5 200 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=7.5A; IB=0.75A IC=7.5A; IB=0.75A IC=7.5A ; VCE=2V VCB=100V; IE=0 TC=150 VEB=4V; IC=0 IC=7.5A ; VCE=2V IC=1A ; VCE=10V;f=1.0MHz 25 2.0 MIN 90 TYP. MJ802 SYMBOL VCEO(SUS) VCE(sat) VBE(sat) VBE ICBO IEBO hFE fT MAX UNIT V 0.8 1.3 1.3 1.0 5.0 1.0 100 V V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJ802 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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