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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors TIP32/32A/32B/32C DESCRIPTION *With TO-220C package *Complement to type TIP31/31A/31B/31C APPLICATIONS *Medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP32 VCBO Collector-base voltage TIP32A TIP32B TIP32C TIP32 VCEO Collector-emitter voltage TIP32A TIP32B TIP32C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -3 -5 -1 40 2 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP32 TIP32A IC=-30mA; IB=0 TIP32B TIP32C VCE(sat) VBE Collector-emitter saturation voltage Base-emitter on voltage TIP32 TIP32A TIP32B TIP32C TIP32/32A TIP32B/32C IC=-3A ;IB=-0.375A IC=-3A ; VCE=-4V VCE=-40V; VEB=0 VCE=-60V; VEB=0 CONDITIONS SYMBOL TIP32/32A/32B/32C MIN -40 -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -80 -100 -1.2 -1.8 V V ICES Collector cut-off current -0.2 VCE=-80V; VEB=0 VCE=-100V; VEB=0 VCE=-30V; IB=0 -0.3 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-10V 25 10 3 50 -1.0 mA ICEO Collector cut-off current mA IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency mA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE TIP32/32A/32B/32C Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors TIP32/32A/32B/32C 4 |
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