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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 DESCRIPTION With TO-247 package Complement to type 2SA1633 High current and high power capability APPLICATIONS For audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER CHA IN Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base CONDITIONS OND IC TOR UC VALUE 150 150 6 10 UNIT V V V A W ae ae Emitter-base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Open collector TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 150 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 60 fT Transition frequency hFE Classifications D 60-120 E F IC=1A ; VCE=10V CHA IN 100-200 E SEM NG 160-320 OND IC TOR UC 20 320 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4278 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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