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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitter CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage E SEM NG Open base Open collector TC=25ae OND IC TOR UC VALUE 160 120 6 8 3 80 150 -55~150 UNIT V V V A A W ae ae Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=3A ;IB=0.3A VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=12V 50 200 20 MIN 120 TYP. 2SC4467 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT MAX UNIT V 1.5 10 10 180 |I |I V A A pF MHz Switching times ton ts tf Fall time Turn-on time Storage time hFE Classifications O 50-100 P 70-140 Y 90-180 INC E SEM ANG H IC=4A;RL=10| IB1=- IB2=0.4A VCC=40V OND IC TOR UC 0.13 | 3.50 0.32 s | | s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4467 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4467 CHA IN E SEM NG OND IC TOR UC 4 |
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