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SMD Type
Transistors
Silicon NPN triple diffusion planar type 2SC5457
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
+0.2 9.70 -0.2 +0.15 0.50 -0.15
High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE
+0.1 0.80-0.1
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25 Ta = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VCEO VEBO ICP IC IB PC Rating 500 500 400 7 6 3 1.2 30 1 150 -55 to +150 Unit V V V V A A A W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) fT ton tstg tf Testconditons VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1.5A, IB1 = 0.15A, IB2 =-0.3A, VCC = 200V 10 1.0 3.0 0.3 is 400 10 8 40 1 1.5 V MHz Min Typ Max 100 100 Unit iA iA V V
3.80
High-speed switching
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