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| 2SA1213 Elektronische Bauelemente RoHS Compliant Product PNP Silicon Medium Power Transistor SOT-89 D Dimensions In Millimeters Dimensions In Inches Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.060TYP Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 1.BASE 2.COLLECTOR 3.EMITTER E1 D1 A Symbol A b b1 c Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 E D D1 E E1 b1 *Features b L e e1 C e e1 L 3.100 1.100 0.114 0.035 0.122 0.043 Collector Current -2A Low power dissipation 0.5W *Stucture Epitaxial planar type. PNP silicon transistor. ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Tamb=25 unless otherwise conditions A IE=0 specified MIN -50 -50 -5 -0.1 -0.1 70 20 -0.5 -1.2 V V 240 MAX UNIT V V V A A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE 1 Test Ic=-100 IC= -10mA , IB=0 IE=-100 A IC=0 VCB=-50 V , IE=0 VEB=-5 V , IC=0 VCE=-2V, IC= -0.5A VCE=-2V, IC= -2A IC=-1A, IB= -0.05A IC=-1A, IB= -0.05A DC current gain hFE 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCEsat VBEsat Transition frequency f T VCE= -2V, IC=-0.5A 100 MHz CLASSIFICATION OF hFE Marking http://www.SeCoSGmbH.com NO NY Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SA1213 Elektronische Bauelemente PNP Silicon Medium Power Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SA1213 Elektronische Bauelemente PNP silicon Medium Power Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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