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| SMD Type Silicon NPN Epitaxial Planar Type 2SD1823 Transistors IC Features High forward current transfer ratio hFE. Low collector-emitter saturation voltage VCE(sat). High emitter-base voltage VEBO. Low noise voltage NV. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 40 15 50 100 150 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Collector-emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO hFE Testconditons IC = 10 iA, IE = 0 IC = 1 mA, IB = 0 IE = 10 iA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, IB = 0 VCE = 10 V, IC = 2 mA 400 0.05 120 Min 50 40 15 0.1 1 2000 0.20 V MHz Typ Max Unit V V V iA iA VCE(sat) IC = 10 mA, IB = 1 mA fT VCB = 10 V, IE = ?2 mA, f = 200 MHz hFE Classification Marking Rank hFE R 400 800 1Z S 600 1200 T 1000 2000 www.kexin.com.cn 1 |
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