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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3749
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG
DESCRIPTION
The 2SK3749 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an
PACKAGE DRAWING (Unit: mm)
2.1 0.1 1.25 0.1
2.0 0.2
1
3
0.9 0.1
* Because of its high input impedance, there's no need to consider drive current
ORDERING INFORMATION
PART NUMBER PACKAGE SC-70 (SSP)
2SK3749 Marking: G27
1 : Source 2 : Gate 3 : Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note
EQUIVALENT CIRCUIT
50 7.0 100 200 150 150 -55 to +150 V V mA mA mW C C
Gate Protection Diode Gate Body Diode Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
Total Power Dissipation Channel Temperature Storage Temperature Note PW 10 ms, Duty Cycle 50%
0 to 0.1
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17136EJ1V0DS00 (1st edition) Date Published April 2004 NS CP(K) Printed in Japan
0.15-0.05
Source
+0.1
* Gate can be driven by 2.5 V
0.3
FEATURES
Marking
0.3 +0.1 -0
stereos and video cameras.
+0.1
actuator for low-current portable systems such as headphone
0.3-0 0.65 0.65
2
2004
2SK3749
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 50 V, VGS = 0 V VGS = 7.0 V, VDS = 0 V VDS = 3.0 V, ID = 1.0 A VDS = 3.0 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA VGS = 4.0 V, ID = 10 mA VDS = 3.0 V VGS = 0 V f = 1 MHz VDD = 3.0 V, ID = 20 mA VGS = 3.0 V RG = 10
MIN.
TYP.
MAX. 1.0 5.0
UNIT
A A
V mS
0.9 20
1.2
1.5
Drain to Source On-state Resistance
20 15 6.0 8.0 1.2 9.0 50 20 40
40 20
pF pF pF ns ns ns ns
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Ciss Coss Crss td(on) tr td(off) tf
Note Pulsed: PW 350 s, Duty Cycle 2%
TEST CIRCUIT SWITCHING TIME
D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1% ID
Wave Form
VGS VGS
Wave Form
0
10% 90%
VGS
90%
90%
ID
0 10% 10%
td(on) ton
tr
td(off) toff
tf
2
Data Sheet D17136EJ1V0DS
2SK3749
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPRATURE 180
PT- Total Power Dissipation - mW
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100
150 120 90 60 30 0 0 30 90 120 150 60 TA - Ambient Temperature - C 180
ID - Drain Current - mA
80
4.0 V 3.5 V
3.0 V
60
2.5 V
40
20
VGS = 2.0 V
0
0
2 3 4 1 VDS - Drain to Source Voltage - V
5
TRANSFER CHARACTERISTICS 100
|yfs| - Forward Transfer Admittance - mS
VDS = 3.0 V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100
VDS = 3.0 V
10
ID - Drain Current - mA
TA = -25C
50
25C
1
TA = 75C 25C -25C
125C
0.1
20
0.01
0.001 0 1 2 3 VGS - Gate to Source Voltage - V
10 1 2 5 10 20 ID - Drain Current - A 50 100
100 50
RDS(on) - Drain to Source On-State Resistance -
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
VGS = 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 50
TA = 75C 25C -25C VGS = 4.0 V
20 10 5
TA = 75C 25C -25C
20 10 5
2 1 1 2 5 10 20 ID - Drain Current - mA 50 100
2 1 1 2 5 10 20 ID - Drain Current - mA 50 100
Data Sheet D17136EJ1V0DS
3
2SK3749
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30
Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10
Ciss, Coss, Crss - Capacitance - pF
5
Ciss Coss
20
ID = 1 mA 10 mA 50 mA
2 1 0.5
Crss
10
0.2 0.1
VGS = 0 V f = 1 MHz
1 2 3 4 5 6 VGS - Gate to Source Voltage - V
7
1
2 5 10 20 50 VDS - Drain to Source Voltage - V
100
SWITCHING CHARACTERISTICS 100
td(on), tr, td(off), tf - Switching Time - ns
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
tr
50
tf
20
td(off)
IF - Diode Forward Current - mA
10 5
td(on)
10
2 1 10
VDD = 3.0 V VGS = 3.0 V RG = 10
1 1000 0 0.2 0.4 0.6 0.8 1.0 VF(S-D) - Source to Drain Voltage - V
20
50 100 200 ID - Drain Current - mA
500
4
Data Sheet D17136EJ1V0DS
2SK3749
* The information in this document is current as of April, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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