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| SMD Type Complementary 20-V (D-S) MOSFET KI5513DC IC IC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 85 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 1.8 2.1 1.1 Symbol VDS VGS ID 4.2 3 10 0.9 1.1 0.6 -1.8 2.1 1.1 -55 to 150 3.1 2.2 N-Channel 5 secs Steady State 20 12 -2.9 -2.1 -10 -0.9 1.1 0.6 -2.1 -1.5 P-Channel 5 secs Steady State -20 V V A A A A W W Unit Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Case (Drain) *Surface Mounted on 1" X 1" FR4 Board. t 5 sec Symbol RthJA RthJF Typ 50 90 30 Max 60 110 40 /W Unit Steady State Steady State www.kexin.com.cn 1 SMD Type KI5513DC Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 12 V VDS = 0 V VGS = 12 V VDS = 20V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 VDS = -20V, VGS = 0 V, TJ = 70 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -10 V, VGS = -4.5 V, ID = -2.1A N Channel VDD = 10 V, RL = 10 ID= 1A, VGEN = 4.5V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -10 V, RL = 10 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -4.5 V, Rg = 6 IF =0.9 A, di/dt = 100 A/ IF = -0.9 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 -10 0.065 0.075 0.130 0.155 0.115 0.134 0.215 0.260 8 5 0.8 -0.8 4 3 0.6 0.9 1.3 0.6 12 13 35 35 19 25 9 25 40 40 18 20 55 55 30 40 15 40 80 80 1.2 -1.2 6 6 Min 0.6 -0.6 Typ Max 1.5 -1.5 100 100 1 -1 5 -5 IC IC Unit V nA A A VGS = 4.5 V, ID = 3.1A Drain Source On State Resistance* rDS(on) VGS = -4.5 V, ID = -2.1A VGS = 2.5 V, ID = 2.3A VGS = -2.5 V, ID = -1.7A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 10 V, ID = 3.1A VDS = -10 V, ID = -2.1A IS = 0.9A, VGS = 0 V IS = -0.9A, VGS = 0 V N-Channel VDS = 10V, VGS = 4.5V, ID = 3.1A S V nC Turn Off Delay Time td( off) ns 300 s, duty cycle 2%. 2 www.kexin.com.cn |
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