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| BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES Excellent HFE Linearity. High DC current gain. Production specification M28S Pb Lead-free APPLICATIONS General purpose application, switching application. ORDERING INFORMATION Type No. M28S Marking 28S SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction and Storage Temperature Value 40 20 6 1000 200 -55~150 Units V V V mA mW ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSTC058 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions IC=100A,IE=0 IC=1mA,IB=0 B Production specification M28S MIN 40 20 6 0.1 0.1 290 300 300 300 0.55 100 9 V MHz pF 1000 TYP MAX UNIT V V V A A IE=100A,IC=0 VCB=35V,IE=0 VEB=5V,IC=0 VCE=1V,IC=1mA DC current gain hFE VCE=1V,IC=0.1A VCE=1V,IC=0.3A VCE=1V,IC=0.5A Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob IC=600mA, IB=20mA B VCE=10V, IC=50mA VCB=10V,IE=0,f=1MHz CLASSIFICATION Rank Range OF hFE2 B C 500-700 D 650-1000 300-550 Document number: BL/SSSTC058 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package A E Production specification M28S SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device M28S INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC058 Rev.A www.galaxycn.com 3 |
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