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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-126 package *High current *Complement to type BD135/137/139 APPLICATIONS *Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD136 BD138 BD140 Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD136 VCBO Collector-base voltage BD138 BD140 BD136 VCEO Collector-emitter voltage BD138 BD140 VEBO IC ICM IBM Pt Tj Tstg Tamb Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature Operating ambient temperature Tmb670 Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -100 -45 -60 -100 -5 -1.5 -2 -1 8 150 -65~150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 10 UNIT K/W K/W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter voltage CONDITIONS IC=-0.5A; IB=-50mA IC=-500mA ; VCE=-2V VCB=-30V; IE=0 ICBO Collector cut-off current VCB=-30V; IE=0 Tj=125 IEBO hFE-1 hFE-2 hFE-3 fT Emitter cut-off current DC current gain DC current gain BD136-10;BD138-10;BD140-10 BD136-16;BD138-16;BD140-16 DC current gain Transition frequency VEB=-5V; IC=0 IC=-5mA ; VCE=-2V IC=-150mA ; VCE=-2V IC=-500mA ; VCE=-2V BD136 BD138 BD140 SYMBOL VCEsat VBE MIN TYP. MAX -0.5 -1.0 -100 -10 -100 UNIT V V nA A nA 40 63 63 100 25 160 MHz 250 160 250 IC=-50mA; VCE=-5V ;f=100MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD136 BD138 BD140 Fig.2 Outline dimensions 3 |
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