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 RJK0395DPA
Silicon N Channel Power MOS FET Power Switching
REJ03G1786-0200 Rev.2.00 Apr 03, 2009
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) * Pb-free * Halogen-free * * * * *
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5678 DDDD
5678
4 G
4 321
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg
Note 2
Ratings 30 20 30 120 30 12 14.4 30 4.17 150 -55 to +150
Unit V V A A A A mJ W C/W C C
REJ03G1786-0200 Rev.2.00 Apr 03, 2009 Page 1 of 6
RJK0395DPA
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 5.9 7.6 80 1670 225 115 2.2 11 5.0 2.6 9.7 4.9 42 5.4 0.86 15 Max -- 0.1 1 2.5 7.7 10.6 -- -- -- -- -- -- -- -- -- -- -- -- 1.12 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 30 A VGS = 10 V, ID = 15 A VDD 10 V RL = 0.67 Rg = 4.7 IF = 30 A, VGS = 0 Note4 IF =30 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1786-0200 Rev.2.00 Apr 03, 2009 Page 2 of 6
RJK0395DPA
Main Characteristics
Power vs. Temperature Derating
40 1000
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
30
100
10
10
s 0 s m
s
1
20
10
PW = 10 ms
DC n tio era Op
10
1
Operation in this area is limited by RDS(on) Tc = 25 C
0
50
100
150
200
0.1 1 shot Pulse 0.1 1
10
100
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 4.5 V 10 V 20
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Pulse Test
3.0 V
Drain Current ID (A)
3.2 V
12
Drain Current ID (A)
16
16
12
8
VGS = 2.8 V
8
4
4
Tc = 75C
25C -25C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (mV)
400
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Registance RDS(on) (m)
100
Pulse Test
Pulse Test
30
300
200
10
VGS = 4.5 V
10 V
ID = 20 A
100 10 A
5A
3
0
4
8
12
16
20
1 1
3
10
30
100
300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1786-0200 Rev.2.00 Apr 03, 2009 Page 3 of 6
RJK0395DPA
Static Drain to Source on State Resistance vs. Temperature
Drain to Source On State Registance RDS(on) (m)
25 Pulse Test 10000 3000
Typical Capacitance vs. Drain to Source Voltage
Capacitance C (pF)
20
1000 300
Ciss
15
ID = 5 A, 10 A, 20 A VGS = 4.5 V
10
Coss 100 Crss 30 10 0 VGS = 0 f = 1 MHz 10 20 30
5 0 -25
10 V
5 A, 10 A, 20 A
0
25
50
75
100 125 150
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
50
Reverse Drain Current vs. Source to Drain Voltage
20 50
Reverse Drain Current IDR (A)
ID = 30 A VGS VDD = 25 V 10 V
10 V 40 5V
Pulse Test
40
16
30
VDS
12
30
20 VDD = 25 V 10 V
8
20 VGS = 0, -5 V
10
4
10
0 0 8 16 24 32
0 40
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
20 IAP = 12 A VDD = 15 V duty < 0.1% Rg 50
16
12
8
4 0 25
50
75
100
125
150
Channel Temperature Tch (C)
REJ03G1786-0200 Rev.2.00 Apr 03, 2009 Page 4 of 6
RJK0395DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3
1
D=1 0.5
0.3
0.2
0.1
0.1 5 0.0
ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C
PDM PW T
0.01 10
1s
0.03
ho
0.
tp
01
se
0.
02
D=
PW T
ul
100
1m
10 m
100 m
1
10
Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform
1 2 L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP Rg D. U. T VDD VDS
VDS Monitor
L IAP Monitor
EAR =
ID
Vin 15 V 0 VDD
Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor
Switching Time Waveform
90% 10% 10% 10%
90% td(on) tr
90% td(off) tf
REJ03G1786-0200 Rev.2.00 Apr 03, 2009 Page 5 of 6
RJK0395DPA
Package Dimensions
Package Name WPAK JEITA Package Code - RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g
Unit: mm
0.5 0.15
4.21Typ 1.27Typ
5.1 0.2
0.8Max
3.9 0.2
6.1
5.9
0.04Min
0.7Typ
0.635Max
1.27Typ
0.2Typ
0.5 0.15
3.8 0.2
+0.1 -0.3
+0.1 -0.2
0.4 0.06
0.05Max 0Min Stand-off
4.9 0.1
(Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists.
Ordering Information
Part No. RJK0395DPA-00-J53 Quantity 3000 pcs Taping Shipping Container
REJ03G1786-0200 Rev.2.00 Apr 03, 2009 Page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2009. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2


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