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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB900 DESCRIPTION *With TO-220C package *Low collector saturation voltage *Wide area of safe operation APPLICATIONS *For power amplifier and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -50 -50 -5 -4 40 150 -50~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-1mA; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-2A; IB=-0.2A IC=-2A ; VCE=-4V VCB=-50V; IE=0 VCE=-50V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V 40 MIN -50 -50 -5 TYP. 2SB900 MAX UNIT V V V -1.0 -1.4 -0.1 -1.0 -0.1 V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB900 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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