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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTA125TUPT CURRENT 100 m A m p er e FEATURE * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=200k, Typ. ) (2) SC-70/SOT-323 (3) 1.30.1 0.30.1 0.65 2.00.2 0.65 (1) CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. 1.250.1 MARKING TU6 E B 2 1 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT TR R1 3 C Dimensions in millimeters SC-70/SOT-323 LIMITING VALUES In accordance with the Absolute Maximum Rating System . SYMBOL VCBO VCEO VEBO IC PC TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2005-06 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Collector Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS -50 -50 -5 VALUE V V V mA UNIT -100 Tamb 25 OC, Note 1 200 -55 +150 -55 +150 junction - soldering point 140 mW O C O C C/W O RATING CHARACTERISTIC ( CHDTA125TUPT ) CHARA CTERISTICS Tamb = 25 C unless otherwise specied. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage CONDITIONS IC= -50uA IE= -50uA MIN. -50.0 -50.0 - - - - - - 250 200 250 TY P . - - - -0.3 -0.5 -0.5 600 260 - K MHz MAX. V V V V uA uA UNIT Collector-Emitter breakdown voltage IC= -1mA -5.0 Collector-Emitter Saturation voltage IC= -0.5mA; IB= -0.05mA - Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency VCB= -50V VEB= -4V IC= -1mA; VCE= -5.0V IE=5mA, VCE= -10.0V f=100MHz = - - 100 140 - Not e 1.Pulse test: tp300uS; 0.02. |
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