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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM4301PAPT CURRENT 20 Ampere FEATURE * Small flat package. ( TO-252A ) * Super high density cell design for extremely low RDS(ON). * High power and current handing capability. .280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95) TO-252A .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) * P-Channel Enhancement (1) (3) (2) .417 (10.6) .346 (8.80) CONSTRUCTION .261 (6.63) .213 (5.40) .035 (0.90) .025 (0.64) .102 (2.59) .078 (1.98) 1 Gate .024 (0.61) .016 (0.40) CIRCUIT 1G 3 D 2 Source 3 Drain( Heat Sink ) 2S Dimensions in inches and (millimeters) TO-252A Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM4301PAPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous -40 V V 20 -20 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A -80 31 -55 to 150 -55 to 150 W C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W 2007-06 RATING CHARACTERISTIC CURVES ( CHM4301PAPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -32 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V -40 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = -250 A VGS=-10V, ID=-12A VGS=-4.5V, ID=-8A -1 32 50 12 -3 42 V m 65 S Forward Transconductance VDS = -5V, ID = -8A Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -20V, VGS = 0V, f = 1.0 MHz 1115 205 120 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q gd ton tr toff tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=-20V, ID=-5A VGS=-10V V DD= -20V ID = -5.0A , VGS = -10 V RGEN= 3 19 2.1 3.4 12 5 40 13 25 nC 25 15 80 30 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) -20 -1.3 A V Drain-Source Diode Forward Voltage IS = -1.0A , VGS = 0 V (Note 2) RATING CHARACTERISTIC CURVES ( CHM4301PAPT ) Typical Electrical Characteristics Figure 1. Output Characteristics 10 10 Figure 2. Transfer Characteristics V G S =-1 0 , - 6 , - 5 V 8 -I D , DRAIN CURRENT (A) 6 -I D , DRAIN CURRENT (A) 8 6 4 VG S =-3 . 0 V 4 J=125C T 2 TJ=-55C TJ=25C 2 0 0 1.0 2.0 3.0 4.0 -VDS , DRAIN-TO-SOURCE VOLTAGE (V) 5.0 0 0 3.0 4.0 2.0 1.0 -VGS , GATE-TO-SOURCE VOLTAGE (V) 5.0 Figure 3. Gate Charge 10 VDS=-20V ID=-5A 2.2 1.9 Figure 4. On-Resistance Variation with Temperature VGS=-10V ID=-12A -VGS , GATE TO SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 8 R DS(on) , NO RMALIZED 1.6 6 1.3 4 1.0 2 0.7 0 0 4 8 12 Qg , TOTAL GATE CHARGE (nC) 16 20 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
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