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| EIC1414-12 ISSUED 6/30/2006 14.0-14.5 GHz 12-Watt Internally Matched Power FET Excelics EIC1414-12 .827.010 .669 .120 M IN .120 M IN FEATURES * * * * * * 14.0- 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 20% Power Added Efficiency Hermetic Metal Flange Package .024 .421 .125 .508.008 .442 .168.010 ALL DIM ENSIO NS IN IN CHES .004 .063 .004 .105.008 ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ 3500mA Gain at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ 3500mA Gain Flatness f = 14.0-14.5GHz VDS = 10 V, IDSQ 3500mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 3500mA f = 14.0-14.5GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance3 2) S.C.L. = Single Carrier Level. 1,2 Caution! ESD sensitive device. MIN 39.5 4.0 TYP 40.5 5.0 MAX UNITS dBm dB 0.6 20 3600 6000 -2.5 2.3 4200 7500 -4.0 2.6 o dB % mA mA V C/W f = 14.0-14.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 136mA -23mA 39.5dBm o 175 C o -65 to +175 C CONTINUOUS2 10V -4V 45mA -8mA @ 3dB Compression 175 oC -65 to +175 oC 58W Vds Vgs Igsf Igsr Pin Tch Tstg Pt 58W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised June 2006 |
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