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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20ASJ-03 HIGH-SPEED SWITCHING USE FX20ASJ-03 OUTLINE DRAWING 6.5 5.0 0.2 4 Dimensions in mm 5.5 0.2 1.5 0.2 0.5 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 * 4V DRIVE * VDSS ................................................................................ -30V * rDS (ON) (MAX) .............................................................. 0.13 * ID ....................................................................................... -20A * Integrated Fast Recovery Diode (TYP.) ...........50ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 24 GATE DRAIN SOURCE DRAIN MP-3 MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings -30 20 -20 -80 -20 -20 -80 30 -55 ~ +150 -55 ~ +150 Unit V V A A A A A W C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 0.26 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20ASJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = -1mA, VDS = 0V VGS = 20V, VDS = 0V VDS = -30V, VGS = 0V ID = -1mA, VDS = -10V ID = -10A, VGS = -10V ID = -2A, VGS = -4V ID = -10A, VGS = -10V ID = -10A, VDS = -5V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -30 -- -- -1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.8 0.11 0.21 -1.1 5.8 1130 232 83 15 33 49 26 -1.0 -- 50 Max. -- 0.1 -0.1 -2.3 0.13 0.29 -1.3 -- -- -- -- -- -- -- -- -1.5 4.17 -- Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -15V, ID = -10A, VGS = -10V, RGEN = RGS = 50 IS = -10A, VGS = 0V Channel to case IS = -10A, dis/dt = 50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -2 -102 32 -7 -5 -3 -2 tw = 10s 100s 1ms TC = 25C Single Pulse 10ms DC 24 -101 -7 -5 -3 -2 16 8 -100 -7 -5 -3 -2 0 0 50 100 150 200 -2 -3 -5 -7-100 -2 -3 -5 -7-101 -2 -3 -5 -7-102 -2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -20 Tc = 25C Pulse Test VGS = -10V -8V -7V OUTPUT CHARACTERISTICS (TYPICAL) -10 VGS = -10V -8V -6V -5V -6V DRAIN CURRENT ID (A) -16 DRAIN CURRENT ID (A) -8 -12 -5V PD = 30W -6 -4V -8 -4 -4V Tc = 25C Pulse Test -3V -4 -3V -2 0 0 -1.0 -2.0 -3.0 -4.0 -5.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20ASJ-03 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () VGS = -4V ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -5.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) Tc = 25C Pulse Test -4.0 0.32 Tc = 25C Pulse Test -3.0 ID = -20A 0.24 -10V -2.0 0.16 -1.0 -10A -5A 0.08 0 -10-1 -2 -3 -5 -7-100 -2 -3 -5- 7 -101 -2 -3 -5 -7-102 DRAIN CURRENT ID (A) 0 0 -2 -4 -6 -8 -10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) -20 Tc = 25C VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 4 3 2 TC = 25C 75C 125C DRAIN CURRENT ID (A) -12 FORWARD TRANSFER ADMITTANCE yfs (S) -16 100 7 5 4 3 2 -8 -4 VDS = -5V Pulse Test 0 0 -2 -4 -6 -8 -10 10-1 -3 -5 -7 -100 -2 -3 -5 -7 -101 -2 -3 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 104 7 5 3 2 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) Tch = 25C f = 1MHZ VGS = 0V Ciss 3 2 102 7 5 3 2 td(off) tf tr 103 7 5 3 2 Coss Crss 101 7 5 3 2 td(on) Tch = 25C VGS = -10V VDD = -15V RGEN = RGS = 50 102 7 5 3 2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 -3 100 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 -3 -5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20ASJ-03 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 SOURCE CURRENT IS (A) VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 Tch = 25C ID = -20A -8 VDS = -10V -20V -25V -40 -6 -30 TC = 25C 75C 125C -4 -20 -2 -10 0 0 4 8 12 16 20 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 4 3 2 VGS = -10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) -4.0 VDS = -10V ID = -1mA -3.2 -2.4 100 7 5 4 3 2 -1.6 -0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 1.2 101 7 5 D = 1.0 0.5 3 2 0.2 0.1 PDM tw 1.0 0.8 100 7 5 3 2 0.05 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (C) |
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