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| Datasheet File OCR Text: |
| ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 35 30 5 500 50 150 125 -55 to +125 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SC3876 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=1V, IC=100mA Current Gain Group O Y at VCE=6V, IC=400mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=5V Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=6V, IC=20mA Base Emitter Voltage at IC=100mA, VCE=1V Collector Output Capacitance at VCB=6V, f=1MHz COB 7 pF VBE 0.8 1 V fT 300 MHz VCE(sat) 0.1 0.25 V IEBO 0.1 A ICBO 0.1 A hFE hFE hFE 70 120 25 140 240 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 |
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