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| RED 1. 2. 2.1 2.2 Item No.: 115280 This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) p-Electrode 265 120 180 p-Epitaxy GaAlAs Active Layer n-Epitaxy GaAlAs n-Electrode 265 Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse current Luminous intensity * Symbol VF IR IV Conditions IF = 20 mA VR = 5 V IF = 20 mA min typ 1,90 max 2,30 10 665 Unit V A mcd nm 17,0 650 22,0 656 Peak wavelength IF = 20 mA P Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity (c) 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com |
Price & Availability of 115280
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