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FDS8842NZ N-Channel Power Trench(R) MOSFET
February 2009
FDS8842NZ
N-Channel PowerTrench(R) MOSFET
40 V, 14.9 A, 7.0 m Features
Max rDS(on) = 7.0 m at VGS = 10 V, ID = 14.9 A Max rDS(on) = 11.6 m at VGS = 4.5 V, ID = 11.6 A HBM ESD protection level of 4.4 kV typical(note 3) High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant
General Description
The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Applications
Synchronous Buck for Notebook Vcore and Server Notebook Battery Load Switch
D D D D D G S S Pin 1 S D S D S S D G
SO-8
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25 C TA = 25 C (Note 4) (Note 1a) (Note 1b) Ratings 40 20 14.9 93 253 2.5 1.0 -55 to +150 Units V V A mJ W C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 25 50 C/W
Package Marking and Ordering Information
Device Marking FDS8842NZ Device FDS8842NZ Package SO8 Reel Size 13 '' Tape Width 12 mm Quantity 2500 units
(c)2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C
1
www.fairchildsemi.com
FDS8842NZ N-Channel Power Trench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 32 V, VGS = 0 V VGS = 20 V, VDS = 0 V 40 35 1 10 V mV/C A A
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 14.9 A VGS = 4.5 V, ID = 11.6 A VGS = 10 V, ID = 14.9 A, TJ =125 C VDS = 5 V, ID = 14.9 A 1.0 1.9 -6 5.6 6.7 8.9 111 7.0 11.6 11.1 S m 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz f = 1 MHz 2890 340 220 0.8 3845 455 330 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 20 V, ID = 14.9 A VDD = 20 V, ID = 14.9 A, VGS = 10 V, RGEN = 6 13 7 34 5 52 27 8.6 9.7 23 14 54 10 73 38 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 14.9 A VGS = 0 V, IS = 2.1 A IF = 14.9 A, di/dt = 100 A/s 0.8 0.7 26 15 1.2 1.2 42 27 V ns nC
NOTES: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50 C/W when mounted on a 1 in2 pad of 2 oz copper.
b) 125 C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25 C, L = 3 mH, IAS = 13 A, VDD = 40 V, VGS = 10 V.
(c)2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C
2
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FDS8842NZ N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
60 50
ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V VGS = 4.5 V VGS = 3.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
5
VGS = 3 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
4
VGS = 3.5 V
40 30 20 10
3 2
VGS = 4 V
VGS = 4 V
VGS = 4.5 V
1
VGS = 6 V VGS = 10 V
VGS = 3 V
0 0
0 0 10 20 30 40 50 60
ID, DRAIN CURRENT (A)
0.3
0.6
0.9
1.2
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
20
SOURCE ON-RESISTANCE (m)
1.8
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8
ID = 14.9 A VGS = 10 V
rDS(on), DRAIN TO
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
15
ID = 14.9 A
10
TJ = 125 oC
5
TJ = 25 oC
0.6 -75
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
60
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
60
50
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
40 30
TJ = 150 oC
10
TJ = 150 oC TJ = 25 oC
20
TJ = 25 oC
1
TJ = -55 oC
10
TJ = -55 oC
0 0 1 2 3 4
VGS, GATE TO SOURCE VOLTAGE (V)
0.1 0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C
3
www.fairchildsemi.com
FDS8842NZ N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 14.9 A
5000
8
VDD = 15 V
Ciss
CAPACITANCE (pF)
6
VDD = 20 V
1000
4 2 0 0 10 20 30
VDD = 25 V
Coss
f = 1 MHz VGS = 0 V
Crss
40
50
60
100 0.1
1
10
40
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
10
Ig, GATE LEAKAGE CURRENT (A)
-3
30
IAS, AVALANCHE CURRENT (A)
VGS = 0 V
10
TJ = 125 oC TJ = 25 oC TJ = 100 oC
10
-5
TJ = 125 oC
10
-7
TJ = 25 oC
1 0.001
0.01
0.1
1
10
100
1000
10
-9
tAV, TIME IN AVALANCHE (ms)
0
5
10
15
20
25
30
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive Switching Capability
100
P(PK), PEAK TRANSIENT POWER (W) 1 ms
ID, DRAIN CURRENT (A)
Figure 10. Igss vs Vgs
2000 1000
VGS = 10 V
SINGLE PULSE RJA = 125 oC/W TA = 25 oC
10
10 ms
100
1
THIS AREA IS LIMITED BY rDS(on)
100 ms
0.1
SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 C
o
1s 10 s DC
10
0.01 0.01
0.1
1
10
100 200
1 0.5 -3 10
10
-2
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
(c)2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C
4
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FDS8842NZ N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
SINGLE PULSE
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.001 0.0005 -3 10 10
-2
RJA = 125 C/W
o
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
(c)2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C
5
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Rev. I39
(c) 2008 Fairchild Semiconductor Corporation
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