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ST 13002T / ST 13003T NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator's, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - Continuous Collector Current - Peak Base Current - Peak 1) 1) Symbol ST13002T VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM O Unit ST13003T 400 700 9 1.5 3 0.75 1.5 2.25 4.5 1.4 11.2 40 320 -65 to +150 89 3.12 O 300 600 V V V A A A W mW/OC W mW/OC O Base Current - Continuous Emitter Current - Continuous Emitter Current - Peak Derate above 25 C O 1) Total Power Dissipation @ TA = 25 C Total Power Dissipation @ TC = 25 OC Derate above 25 C O PD PD TJ, Ts RJA RJC Operating and Storage Junction Temperature Range Thermal Resistance ,Junction to Ambient Thermal Resistance ,Junction to Case 1) C C/W C/W O Pulse Test: Pulse Width=5ms, Duty Cycle10%. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 28/04/2006 ST 13002T / ST 13003T Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 0.5 A at VCE = 2 V, IC = 1 A Collector Emitter Sustaining Voltage at IC = 10 mA at IC=10mA Collector Cutoff Current at VCEV = Rated Value, VBE(off) = 1.5 V Emitter Cutoff Current at VEB = 9 V Collector Emitter Saturation Voltage at IC = 0.5 A, IB = 0.1 A at IC = 1 A, IB = 0.25 A at IC = 1.5 A, IB = 0.5 A Base Emitter Saturation Voltage at IC = 0.5 A, IB = 0.1 A at IC = 1 A, IB = 0.25 A Current Gain Bandwidth Product at VCE = 10 V, IC = 100 mA, f = 1 MHz Output Capacitance at VCB = 10 V, f = 0.1 MHz Delay Time Rise Time Storage Time Fall Time Storage Time Crossover Time Fall Time (IC = 1 A,Vclamp = 300 V, IB1 = 0.2 A,VBE(off) = 5 V, TC = 100 C) O Symbol hFE hFE ST13002T ST13003T VCEO(sus) VCEO(sus) ICEV IEBO Min. 8 5 300 400 - Typ. - Max. 40 25 1 1 Unit V V mA mA VCE(sat) VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob td tr ts tf tsv tc tfi 4 - 10 21 0.15 0.5 1 3 1 1.2 0.1 1 4 0.7 4 0.75 - V V V V V MHz pF s s s s s s s (VCC = 125 V, IC = 1 A, IB1 = IB2 = 0.2 A, tp = 25 s, Duty Cycle1%) 1) Pulse Test: Pulse Width=300s, Duty Cycle2%. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 28/04/2006 |
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