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AGR21060E 60 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.
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Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21060EU AGR21060EF Sym Ri JC Ri JC Value 1.0 1.0 Unit C/W C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C: AGR21060EU AGR21060EF Derate Above 25 C: AGR21060EU AGR21060EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS -0.5, 15 Vdc PD PD -- -- TJ 175 175 1.0 1.0 200 W W W/C W/C C C
AGR21060EU (unflanged)
AGR21060EF (flanged)
5B 03 STYLE 1
Figure 1. Available Packages
Features
Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel bandwidth (BW), adjacent channel BW = 3.84 MHz at F1 - 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 - 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: -- Output power: 13.5 W. -- Power gain: 14.5 dB. -- Efficiency: 26%. -- IM3: -34 dBc. -- ACPR: -37 dBc. -- Return loss: -12 dB. High-reliability gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 60 W continuous wave (CW) output power. Large signal impedance parameters available.
TSTG -65, 150
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Table 3. ESD Rating* AGR21060E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4
* Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
AGR 21060 E 60 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter
300 Drain-source Breakdown Voltage (VGS = 0, ID = 100 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
Symbol Off Characteristics V(BR)DSS IGSS IDSS GFS VGS(TH) VGS(Q) VDS(ON)
M in 65 -- -- -- -- -- --
Typ -- -- -- 4.0 -- 3.8 0.08
Max -- 1.8 5.5 100 -- 4.8 -- --
Unit Vdc Adc Adc S Vdc Vdc Vdc
Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 180 A) Gate Quiescent Voltage (VDS = 28 V, ID = 500 mA) Drain-source On-voltage (VGS = 10 V, ID = 0.45 A) Table 5. RF Characteristics Parameter
On Characteristics
Symbol Dynamic Characteristics CRSS
Min --
Typ 1.3
Max --
Un i t pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Common-source Amplifier Power Gain*
(in Agere Systems Supplied Test Fixture) Functional Tests (in Supplied Test Fixture)
Drain Efficiency*
GPS IM3 ACPR P1dB IRL
-- -- -- -- --
Input Return Loss*
Output Power, 1 dB Compression Point (VDD = 28 V, POUT = 60 W (CW), fC = 2140.0 MHz)
Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 - 5 MHz and f2 + 5 MHz)
Third-order Intermodulation Distortion* (IMD3 measured over 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz)
--
14.5 -34 -37 60 -12 26
-- --
--
--
dB dBc dBc W dB %
-- --
Output Mismatch Stress (VDD = 28 V, POUT = 60 W (CW), IDQ = 500 mA, fC = 2140.0 MHz VSWR = 10:1; [all phase angles])
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135.0 MHz, and f2 = 2145 MHz. VDD = 28 Vdc, IDQ = 500 mA, and POUT = 13.5 W avg.
AG R210 60E 60 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21060E
FB1 VGG R1 R2 + C3 C4 + C5 C6 Z7 Z15 C7B C8B C9B Z9 Z1 RF INPUT C1 Z2 Z3 Z4 Z5 Z6 2 1 3 DUT Z10 Z11
PINS: 1. DRAIN 2. GATE 3. SOURCE
VDD1 + Z8 C7A C8A C9A + C15A VDD2 + + C15B
R3
C10A C11A C12A C13A C14A
C10B C11B C12B C13B C14B Z12 Z13 C2 Z14
RF OUTPUT
A. Schematic
Parts List: ? Microstrip Line: Z1 0.361 in. x 0.065 in.; Z2 0.207 in. x 0.150 in.; Z3 0.085 in. x 0.087 in.; Z4 0.130 in. x 0.357 in.; Z5 0.436 in. x 0.087 in.; Z6 0.414 in. x 0.900 in.; Z7 0.424 in. x 0.050 in.; Z8 1.170 in. x 0.050 in.; Z9 0.520 in. x 0.624 in.; Z10 0.120 in. x 0.147 in.; Z11 0.180 in. x 0.250 in.; Z12 0.469 in. x 1.200 in.; Z13 0.068 in. x 0.068 in.; Z14 0.278 in. x 0.065 in.; Z15 1.170 in. x 0.050 in (R) ? ATC chip capacitor: C1, C2: 15 pF 100B150JCA500X; C6, C7: 8.2 pF 100B8R2JCA500X; C11: 1.2 pF 100B1R2JCA500X; C14, C15: 5.6 pF 100B5R6JCA500X. (R) ? Sprague tantalum surface-mount chip capacitor: C3, C4, C12, C13: 22 F, 35 V, T491D226K035AS. (R) ? Vitramon chip capacitor: C5, C9: 22000 pF. ? 0805 size chip capacitor: C8 0.01 F. ? 1206 size chip capacitor: C10 0.1 F. ? 1206 size 0.25 W chip resistors: R1 1 k; R2 560 k; R3 4.7 . (R) ? Fair-Rite ferrite bead: FB1 2743019447. (R) ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout Figure 2. AGR21060E Test Circuit
AGR 21060 E 60 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 180 170
U CT
0.6
Z0 = 10
IN D
90
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.6
1.8
1.4
2.0
3.0
4.0
5.0
10
20
LOA D <
0.2
0.49
OW A RD 7 HST 0.4 N GT -170 EL E AV W 0 < -90 -16
0.1
0.4
0.48
) / Yo (-jB CE
0.6
-85
AN PT CE US ES
1. 0
0.2
6 0.4 4 0.0 0 -15 -80
IV CT
IN
DU
0.3
-75
R
,O o)
5
0.0
5 0.4
-70
06
0.
0 -65 .5
0.6
-60
1.6
0.7
1.4
0.8
1.2
5
0.9
-5
1.0
0
-5
5
-4
MHz (f ) 2110 (f1) 2140 (f2) 2170 (f3)
ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) TB D TB D TB D TB D TB D TB D GATE (2) ZS DRAIN (1) ZL SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
0.
32
0.
1.8
18
0 -5 -25
4
4 0.
0.3
0.1
3
2.
0
7
-30
-60
0.3
0.1
4
6
-
35
-70
0.35
0.15
0.36
0.14 -80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11 -100
0.39
CA P AC I TI
0.1
0.4
-110
VE
RE AC TA N
0.0
0.4 1
9
-12
CE CO M
0
0.0
PO N
0.4
8
2
EN
T
(-j
-1
0.
40
4
Z X/
-10
0.
8
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
20
10
5.0
-15
4.0
-20
3.
0
1.
0
0.8
0. 8
0.6
0.4
10 0.1
-1
20
0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN D EG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES
L E OF ANG
0.2
0.2 0.3
-4 0
50
-20
0.2 2
0.2 8
0.2 9 0.2 1 -30
0. 19 0. 31
0. 07 30
0. 43
AG R210 60E 60 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are 0.005 in. unless specified.
AGR21060EU
PINS: 1. DRAIN 2. GATE 3. SOURCE
PEAK DEVICES AGR21060EU XXXX
AGR21060EF
PINS: 1. DRAIN 2. GATE 3. SOURCE
PEAK DEVICES AGR21060EF XXXX
XXXX - 4 DIGIT TRACE CODE

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