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MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1500HC-66R
IC............................................................... 1500 A VCES ....................................................... 3300V 1-element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
29.5 0.5
57 0.25
190 0.5 57 0.25
57 0.25
6-M8 NUTS
15 0.3
6
4
2
140 0.5 124 0.25
20 -0.2
+0.1
40 0.3
9 0.2
5.2 0.3
28 0.5 5 0.2
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
38
+1 0
LABEL
40 0.3
6 (C) C
4 (C)
2 (C)
5
>PET+PBT<
3
1
E C
>PET+PBT<
G
G E 5 (E) 20.25 0.3 8-7 MOUNTING HOLES 3 (E) 1 (E)
CIRCUIT DIAGRAM
3-M4 NUTS
41.25 0.3 79.4 0.3 61.5 0.3 13 0.3 61.5 0.3
SCREWING DEPTH MIN 16.5
SCREWING DEPTH MIN 7.7
Mar. 2009 1
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MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Item Conditions
VGE = 0V, Tj = -40...+150C Collector-emitter voltage VGE = 0V, Tj = -50C Gate-emitter voltage VCE = 0V, Tj = 25C DC, Tc = 95C Collector current (Note 1) Pulse DC Emitter current (Note 2) (Note 1) Pulse Maximum power dissipation(Note 3) Tc = 25C, IGBT part Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD 10 pC Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC =2500V, VCE VCES, VGE =15V, Tj =150C
Ratings 3300 3200 20 1500 3000 1500 3000 15600 6000 2600 -50 ~ +150 -50 ~ +150 -55 ~ +150 10
Unit V V A A A A W V V C C C s
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions Tj = 25C Tj = 125C Tj = 150C Min -- -- -- 5.7 -0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 36.0 6.2 -- 210.0 13.0 6.0 16.0 2.45 3.10 3.25 1.00 0.95 0.95 0.28 0.30 0.30 2.45 2.90 3.10 2.70 3.30 3.60 2.70 2.80 2.85 0.30 0.35 0.40 2.00 2.45 2.50 2.20 2.70 2.80 2.15 2.30 2.25 Max 6.0 -- -- 6.7 0.5 -- -- -- -- -- 3.70 -- -- 1.25 1.25 -- 0.50 0.50 -- -- -- -- -- -- -- 3.30 3.30 -- 1.00 1.00 -- -- -- -- -- -- -- 2.80 -- Unit
ICES VGE(th) IGES Cies Coes Cres Qg VCE(sat)
Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage
VCE = VCES, VGE = 0V VCE = 10 V, IC = 150 mA, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25C VCC = 1800 V, IC = 1500 A, VGE = 15 V IC = 1500 A VGE = 15 V
mA V A nF nF nF C V
td(on)
Turn-on delay time VCC = 1800 V IC = 1500 A VGE = 15 V RG(on) = 1.6 Ls = 100 nH Inductive load
tr
Turn-on rise time
Eon(10%)
Turn-on switching energy
(Note 5)
Eon
Turn-on switching energy
(Note 6)
td(off)
Turn-off delay time VCC = 1800 V IC = 1500 A VGE = 15 V RG(off) = 5.6 Ls = 100 nH Inductive load
tf
Turn-off fall time
Eoff(10%)
Turn-off switching energy
(Note 5)
Eoff
Turn-off switching energy
(Note 6)
VEC
Emitter-collector voltage
(Note 2)
IE = 1500 A VGE = 0 V
Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C (Note 4) Tj = 125C Tj = 150C (Note 4)
s
s
J/P
J/P
s
s
J/P
J/P
V
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 2
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MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol Item Reverse recovery time
(Note 2)
Conditions Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C Tj = 25C Tj = 125C Tj = 150C
trr
Irr
Reverse recovery current
(Note 2)
Qrr
Reverse recovery charge
(Note 2)
Erec(10%)
Reverse recovery energy
(Note 2)(Note 5)
VCC = 1800 V IC = 1500 A VGE = 15 V RG(on) = 1.6 Ls = 100 nH Inductive load
Erec
Reverse recovery energy
(Note 2)(Note 6)
Min -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Limits Typ 0.50 0.70 0.80 1250 1500 1550 1050 1700 2000 1.05 1.75 2.00 1.20 2.00 2.30
Max -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Unit s
A
C
J/P
J/P
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K ,D(c-f) = 100 m Min -- -- -- Limits Typ -- -- 6.0 Max 8.0 15.0 -- Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Mt Ms Mt m CTI da ds LP CE RCC'+EE' rg
Note 1. 2. 3. 4. 5. 6.
Item
Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw
Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistor
Tc = 25C Tc = 25C
Min 7.0 3.0 1.0 -- 600 19.5 32.0 -- -- --
Limits Typ -- -- -- 1.2 -- -- -- 11.0 0.12 1.5
Max 22.0 6.0 3.0 -- -- -- -- -- -- --
Unit N*m N*m N*m kg -- mm mm nH m
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (150C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C). Pulse width and repetition rate should be such as to cause negligible temperature rise. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. The integration range of Eon / Eoff / Erec according to IEC 60747.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 3
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MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 3000 Tj = 150C 2500
COLLECTOR CURRENT (A)
TRANSFER CHARACTERISTICS (TYPICAL) 3000 VCE = VGE
VGE = 19V VGE = 15V
COLLECTOR CURRENT (A)
2500 VGE = 11V
2000 VGE = 13V 1500
2000
1500
1000 VGE = 9V 500
1000
500 Tj = 25C Tj = 150C
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3000 VGE = 15V 2500
COLLECTOR CURRENT (A) EMITTER CURRENT (A)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 3000
2500
2000
2000
1500
1500
1000
1000
500
Tj = 25C Tj = 125C Tj = 150C 0 1 2 3 4 5
500
Tj = 25C Tj = 125C Tj = 150C 0 1 2 3 4 5
0
0
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 4
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. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
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MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
7 5
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCE = 1800V, IC = 1500A Tj = 25C 15
3 2
Cies
GATE-EMITTER VOLTAGE (V)
10
CAPACITANCE (nF)
102
7 5 3 2
5
0
101
7 5 3 2
Coes Cres VGE = 0V, Tj = 25C f = 100kHz
23 5 7 100 23 5 7 101 23 5 7 102
-5
-10
100 -1 10
-15
0
5
10
15
20
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (C)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 7
SWITCHING ENERGIES (J/P)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 VCC = 1800V, VGE = 15V RG(on) = 1.6, RG(off) = 5.6 LS = 100nH, Tj = 150C Inductive load
VCC = 1800V, VGE = 15V RG(on) = 1.6, RG(off) = 5.6 LS = 100nH, Tj = 125C Inductive load
7 Eon
SWITCHING ENERGIES (J/P)
Eon
6 5 4 3 2 1 0 Erec Eoff
6 5 4 3 2 1 0 Erec Eoff
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 5
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. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 VCC = 1800V, IC = 1500A VGE = 15V, LS = 100nH 7 Tj = 125C, Inductive load 8
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1800V, IC = 1500A VGE = 15V, LS = 100nH 7 Tj = 150C, Inductive load
SWITCHING ENERGIES (J/P)
6 5 4 3 2
SWITCHING ENERGIES (J/P)
Eon
6 5 4
Eon
Eoff
Eoff 3 2 1 0
Erec 1 0
Erec
0
2
4
6
8
10
12
0
2
4
6
8
10
12
GATE RESISTOR ()
GATE RESISTOR ()
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102
7 5 3 2
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102
7 5 3 2
VCC = 1800V, VGE = 15V RG(on) = 1.6, RG(off) = 5.6 LS = 100nH, Tj = 125C Inductive load
VCC = 1800V, VGE = 15V RG(on) = 1.6, RG(off) = 5.6 LS = 100nH, Tj = 150C Inductive load
101
101
SWITCHING TIMES (s)
3 2
SWITCHING TIMES (s)
7 5
7 5 3 2
td(off) td(on) tf
td(off)
100
7 5 3 2
100
7 5 3 2
tr
td(on)
10-1
7 5 3 2
10-1 tr
7 5 3 2 2 3 45 7 103 2 3 45 7 104
tf
10-2 2 10
10-2 2 10
2
3 45
7 103
2
3 45
7 104
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 6
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. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102
7 5
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 102
7 5
104 VCC = 1800V, VGE = 15V RG(on) = 1.6, LS = 100nH Tj = 150C, Inductive load lrr
7 5 3 2
REVERSE RECOVERY TIME (s)
2
lrr
2
REVERSE RECOVERY TIME (s)
3
3
REVERSE RECOVERY CURRENT (A)
3 2
101
7 5 3 2
103
7 5 3 2
101
7 5 3 2
103
7 5 3 2
100
7 5 3 2
trr
102
7 5 3 2
100
7 5 3 2
trr
102
7 5 3 2
10-1 2 10
2
3 45
7 103
2
3 45
101 7 104
10-1 2 10
2
3 45
7 103
2
3 45
7 104
101
EMITTER CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2 Rth(j-c)Q = 8.0K/kW Rth(j-c)R = 15.0K/kW 1.0
0.8
Z th( j -c ) ( t ) =
Ri [K/kW] : i [sec] :
R 1-exp
i i=I
n
-
t
ti
0.6
1 0.0096 0.0001
2 0.1893 0.0058
3 0.4044 0.0602
4 0.3967 0.3512
0.4
0.2
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2009 7
REVERSE RECOVERY CURRENT (A)
VCC = 1800V, VGE = 15V RG(on) = 1.6, LS = 100nH Tj = 125C, Inductive load
7 5

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. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 4000 VCC 2500V, VGE = 15V Tj = 150C, RG(off) = 5.6 20
SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) VCC 2500V, VGE = 15V RG(on) = 1.6, RG(off) = 5.6 Tj = 150C
COLLECTOR CURRENT (A)
3000
COLLECTOR CURRENT (kA)
15
2000
10
1000
5
0
0
1000
2000
3000
4000
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 4000 VCC 2500V, di/dt < 9kA/s Tj = 150C
REVERSE RECOVERY CURRENT (A)
3000
2000
1000
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
Mar. 2009 8

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