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| INFRA-RED 1. 2. 2.1 2.2 Item No.: 115161 H This specification applies to GaAlAs / GaAlAs Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) n-Electrode n-Epitaxy GaAlAs 325 120 150 typ. Active Layer p-Epitaxy GaAlAs p-Electrode 325 Wire bond contacts can also have a spider shape 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse voltage output Power * Switching time Symbol VF VR e tr, tf Conditions IF = 20 mA IR = 10 A IF = 20 mA IF = 20 mA min 5 1,3 typ 1,90 1,65 40 680 max 2,30 Unit V V mW ns nm Peak wavelength P IF = 20 mA Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. e typ min max Quantity (c) 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com |
Price & Availability of 115161H
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