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| CHENMKO ENTERPRISE CO.,LTD SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts APPLICATION * Power driver and Dc to DC convertor . 2SB772PT CURRENT 3 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. 4.6MAX. 1.7MAX. SC-62/SOT-89 1.6MAX. 0.4+0.05 CONSTRUCTION 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 * PNP Switching Transistor MARKING * hFE Classification Q: Q72 P: 772 E: E72 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 0.8MIN. 4.6MAX. 1 B 2 C 3 E Dimensions in millimeters SC-62/SOT-89 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. -40 -30 -5 -3 -3 -0.5 1500 +150 +150 +150 UNITS Volts Volts Volts Amps Amps Amps mW o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-8 RATING CHARACTERISTIC CURVES ( 2SB772PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=-30V IC=0; VEB=-3V VCE=-2V; Note 1 IC=-0.02A IC=-1.0A; Note 2 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A IE=ie=0; VCB=-10V; f=1MHz IC=-0.1A; VCE=-5.0V; f=100MHz SYMBOL ICBO IEBO MIN. TYPE MAX. -1.0 -1.0 UNITS uA uA DC Current Gain hFE 30 100 - 160 -0.3 -1.0 55 100 500 -0.5 -2.0 Volts Volts pF MHz Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Collector Capacitance Transition Frequency VCEsat VBEsat CC fT SWITCHING TIMES ( Between 10% and 90% levels ) PARAMETERS Turn-on Time Storage Time Fall Time IB1 20uSec CONDITION OUTPUT SYMBOL ton ts tf MIN. - TYPE 0.1 1.0 0.1 MAX. - UNITS uSec uSec uSec IB2 INPUT IB2 30 ohmS -30V IB1 -IB1=IB2=0.05A Duty cycle<1% Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500. RATING CHARACTERISTIC CURVES ( 2SB772PT ) Typical Electrical Characteristics Figure 1. CC - Reverse VCB 3000 3000 Figure 2. Cutoff Frequency - IC COLLECTOR CAPACITANCE CC (pF) VCE=-5V 1000 1000 100 CUTOFF FREQUENCY (MHz) 100 10 10 1 -0.1 -0.3 -1.0 -3.0 -10 -30 -100 1 -1 -10 -100 -1000 COLLECTOR-BASE REVERSE BIAS VOLTAGE VCB (V) COLLECTOR CURRENT IC (mA) Figure 3. hFE - IC COLLECTOR POWER DISSIPATION PC (W) 1000 500 COMMON EMITTER VCE=-2V Figure 4. PC - TA 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 (1) (1) Mounted on ceramic substrate ( 250mm 2x0.8t ) (2) No heat sink DC CURRENT GAIN hFE 300 100 (2) 50 30 10 -10 -30 -100 -300 -1000 -3000 0 20 40 60 80 100 120 140 160 COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE TA ( OC) Figure 5. VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 -10 Figure 6. VBE(sat) - IC BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER COMMON EMITTER IC/IB=10 -5 -3 IC/IB=10 -0.1 -1 -0.05 -0.03 -0.5 -0.3 -0.01 -10 -30 -100 -300 -1000 -3000 -0.1 -10 -30 -100 -300 -1000 -3000 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) RATING CHARACTERISTIC CURVES ( 2SB772PT ) Typical Electrical Characteristics Figure 9. Safe Operation Area -30000 -10000 -5000 -3000 -1000 -500 -300 -100 -50 -30 -10 -0.1 Single nonrepetitive pulse TA=25OC Curve must be derated linearly with increase in temperature Tested without a substrate -0.3 -1.0 -3.0 -10 -30 -100 COLLECTOR CURRENT IC (mA) 1 mS 100 mS 1S COLLECTOR-EMITTER VOLTAGE VCE (V) |
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