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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5887 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) *High Speed Switching *Low Saturation Voltage: VCE(sat)= 0.4V(Max)@ (IC= 7A; IB= 0.35A) *Complement to Type 2SA2098 B APPLICATIONS *Relay drivers, lamp drivers, motor drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous w ww scs .i VALUE 60 V 50 6 V V 15 20 3 30 W 2.0 150 -55~150 A A A UNIT .cn mi e Total Power Dissipation @TC=25 PT Total Power Dissipation @Ta=25 TJ Tstg Junction Temperature Storage Temperature isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS IC= 1mA; RBE= IC= 0.1mA; IE= 0 IE= 0.1mA; IC= 0 IC= 7A; IB= 0.35A B 2SC5887 MIN 50 60 6 TYP. MAX UNIT V V V 0.4 1.4 10 10 560 100 300 V V A A IC= 7A; IB= 0.35A B VCB= 40V; IE= 0 VEB= 4V; IC= 0 Current-Gain--Bandwidth Product Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w scs .i w IC= 1A; VCE= 2V IE= 0; VCB= 10V; f= 1.0MHz IC= 1A; VCE= 10V .cn mi e 180 pF MHz 50 IC= 5A, IB1= -IB2= 0.25A, VCC= 20V 700 40 ns ns ns isc Websitewww.iscsemi.cn 2 |
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