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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-220C package *Complement to type MJE15032 *High transition frequency *DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC =- 0.5 Adc hFE = 10 (Min) @ IC = -2.0 Adc APPLICATIONS *Designed for use as high-frequency drivers in audio amplifiers. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION MJE15033 ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 Open emitter Open base Open collector CONDITIONS VALUE -250 -250 -5 -8 -16 -2 2 50 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance ; junction to case Thermal resistance , junction to ambient MAX 2.5 62.5 UNIT /W /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-1A ;IB=-0.1A IC=-1A ; VCE=-5V VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-1A ; VCE=-5V IC=-2A ; VCE=-5V IC=-0.5A;VCE=-10V;f=1.0MHz 50 50 10 30 MIN -250 MJE15033 SYMBOL VCEO(SUS) VCE(sat) VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT TYP. MAX UNIT V -0.5 -1.0 -10 -10 V V A A MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJE15033 Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 |
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