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| Final data SPI07N60S5 SPP07N60S5, SPB07N60S5 Cool MOSTM Power Transistor * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Optimized capacitances * Improved noise immunity P-TO262 Product Summary VDS @ Tjmax RDS(on) ID P-TO263-3-2 650 0.6 7.3 V A P-TO220-3-1 Type SPP07N60S5 SPB07N60S5 SPI07N60S5 Package P-TO220-3-1 P-TO263-3-2 P-TO262 Ordering Code Q67040-S4172 Q67040-S4185 Q67040-S4328 Marking 07N60S5 07N60S5 07N60S5 G,1 D,2 S,3 Maximum Ratings, at Tc = 25C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 7.3 4.6 Unit A Pulsed drain current TC=25C 1) ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 1 14.6 230 0.5 7.3 6 20 83 -55... +150 A kV/s V W C mJ Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V Avalanche energy (repetitive, limited by Tjmax ) ID = 7.3 A , VDD = 50 V Avalanche current (repetitive, limited by Tjmax ) Reverse diode dv/dt IS =7.3A, VDS TC=25C Operating and storage temperature 2002-07-26 Final data SPI07N60S5 SPP07N60S5, SPB07N60S5 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient (Leaded and through-hole packages) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA 35 62 RthJC RthJA 1.5 62 K/W Symbol min. Values typ. max. Unit Static Characteristics, at Tj = 25 C, unless otherwise specified Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 350 A, Tj = 25 C Zero gate voltage drain current, VDS=VDSS VGS = 0 V, Tj = 25 C VGS = 0 V, Tj = 150 C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-source on-state resistance VGS = 10 V, ID = 4.6 A RDS(on) 0.54 0.6 IGSS IDSS 0.5 1 100 100 nA A VGS(th) 3.5 4.5 5.5 V(BR)DSS 600 V 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. 2 2002-07-26 Final data SPI07N60S5 SPP07N60S5, SPB07N60S5 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Total gate charge Qgs Qgd Qg VDD =350V, ID =7.3A, VGS =0 to 10V VDD =350V, ID =7.3A Symbol Conditions min. Values typ. 4 970 370 10 120 40 170 20 max. 255 30 Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2*ID *RDS(on)max, ID =4.6A VGS =0V, VDS =25V, f=1MHz - S pF VDD =350V, VGS =10V, ID =7.3A, RG=12 ns - 7.5 16.5 27 35 nC Reverse Diode Inverse diode continuous forward current Inverse diode direct current,pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =7.3A VR =350V, IF=lS, diF /dt=100A/s IS ISM TC=25C - 1 750 4.9 7.3 14.6 1.2 1275 - A V ns C 3 2002-07-26 Final data Power dissipation Ptot = f (TC ) 100 W SPP07N60S5 SPI07N60S5 SPP07N60S5, SPB07N60S5 Drain current ID = f (TC ) parameter: VGS 10 V 8 A SPP07N60S5 80 6 70 Ptot ID C 60 50 40 30 5 4 3 2 20 10 0 0 1 20 40 60 80 100 120 160 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID=f (VDS) parameter: D=0.01, TC =25C 10 2 SPP07N60S5 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 K/W SPP07N60S5 A 10 0 tp = 27.0s ID = V DS /I 10 1 Z thJC 100 s 10 -1 on ) D DS ( 10 -2 D = 0.50 0.20 10 0 1 ms R 10 -3 0.10 0.05 10 -4 10 ms single pulse 0.02 0.01 10 -1 DC 0 10 10 1 10 2 V 10 3 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 VDS 4 s tp 10 0 2002-07-26 Final data Typ. output characteristic ID = f (VDS) Parameter: VGS, Tj = 25 C 24 SPI07N60S5 SPP07N60S5, SPB07N60S5 Drain-source on-resistance RDS(on) = f (Tj ) parameter : ID = 4.6 A, VGS = 10 V 3.4 SPP07N60S5 A 20V 2.8 RDS(on) 12V 2.4 ID 16 10V 2 1.6 12 9V 8 8V 1.2 98% typ 7V 6V 0.8 0.4 4 0 0 5 10 15 V VDS 25 0 -60 -20 20 60 100 C 180 Tj Typ. transfer characteristics ID = f ( VGS ) VDS 2 x ID x RDS(on)max 24 Typ. capacitances C = f (VDS) parameter: VGS =0 V, f=1 MHz 10 4 pF A Ciss 10 16 3 ID C 12 10 2 Coss 8 10 1 Crss 4 0 0 4 8 12 VGS V 20 10 0 0 10 20 30 40 50 60 70 80 V 100 VDS 5 2002-07-26 Final data Avalanche energy EAS = f (Tj ) par.: ID =5.5A, VDD =50V 260 SPI07N60S5 SPP07N60S5, SPB07N60S5 Avalanche SOA IAR = f (tAR ) par.: Tj 150 C 8 mJ A 220 200 6 EAS 180 IAR 160 140 5 Tj (START)=25C 4 120 100 80 60 40 20 0 20 40 60 80 100 120 2 3 Tj (START)=125C 1 C 160 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 Tj 4 s 10 tAR Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP07N60S5 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 350 A 7 720 V V V (BR)DSS 680 V GS(th) 5 660 640 620 600 max. 4 typ. 3 min. 2 580 1 560 540 -60 0 -60 -20 20 60 100 C 180 -20 20 60 100 C 180 Tj 6 Tj 2002-07-26 Final data Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 10 s 10 2 SPP07N60S5 SPI07N60S5 SPP07N60S5, SPB07N60S5 Typ. gate charge VGS = f (QGate ) parameter: ID = 7.3 A pulsed 16 V SPP07N60S5 A 12 0,2 VDS max VGS 10 1 0,8 VDS max IF 10 8 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 6 4 2 0.4 0.8 1.2 1.6 2 2.4 V 3 0 0 4 8 12 16 20 24 28 32 nC 38 VSD Qg 7 2002-07-26 Final data P-TO-220-3-1 B 10 0.4 3.7 0.2 A 1.270.13 4.44 SPI07N60S5 SPP07N60S5, SPB07N60S5 15.38 0.6 2.8 0.2 C 5.23 0.9 13.5 0.5 3x 0.75 0.1 1.17 0.22 2x 2.54 0.25 M 0.5 0.1 2.510.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-1 (D2-PAK) 4.4 10 0.2 0...0.3 8.5 1) A 1.27 0.1 B 0.1 2.4 1 0.3 0.05 (15) 9.25 0.2 7.55 1) 0...0.15 0.75 0.1 1.05 2.54 5.08 1) 4.7 0.5 2.7 0.3 0.5 0.1 8 MAX. 0.25 M AB 0.1 B Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9 8 9.98 0.48 0.05 2002-07-26 Final data P-TO-262-3-1 (I 2-PAK) 10 0.2 0...0.3 8.5 1) 1) SPI07N60S5 SPP07N60S5, SPB07N60S5 A B 4.4 1.27 1 0.3 11.6 0.3 2.4 C 4.55 0.2 13.5 0.5 0...0.15 1.05 3 x 0.75 0.1 2 x 2.54 1) 0.5 0.1 2.4 0.25 M ABC Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. 9 9.25 0.2 7.55 0.05 2002-07-26 Final data SPI07N60S5 SPP07N60S5, SPB07N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2002-07-26 |
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