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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD795 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat)= 0.7V(Max) @IC= 2.0A APPLICATIONS *Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25 w ww scs .i VALUE 50 40 5 3.0 6.0 0.6 1.5 UNIT V V .cn mi e V A A A PC Collector Power Dissipation @ TC=25 TJ Tstg Junction Temperature Storage Temperature Range 20 150 -55~150 W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD795 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 0.7 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 1V 0.9 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 1.0 A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 A hFE-1 DC Current Gain IC= 0.5A; VCE= 1V hFE-2 DC Current Gain COB Collector Output Capacitance fT Current-Gain--Bandwidth Product hFE-1 Classifications R 60-120 Q 100-200 w w P 160-320 w. E sem isc IC= 2.5A; VCE= 1V IE= 0; VCB= 10V; f= 1MHz IC= 0.1A; VCE= 5V .cn i 30 60 400 40 pF 95 MHz 200-400 isc Websitewww.iscsemi.cn 2 |
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