 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 42-DL213 Version Issue Date File Name Total Pages : A.001 : 2003/10/14 : SP-DL213-A.001.doc :6 Optical Fiber Transmitting IC 9 7 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park, Hsin-Chu, Taiwan 300, R.O.C. Fax886-3-5645626 Tel886-3-5645656 SILICON TOUCH TECHNOLOGY INC. 42-DL213 42-DL213 OPTICAL FIBER TRANSMITTING IC GENERAL DESCRIPTION 42-DL213 is a driver IC designed for the application of high-speed optical fiber transmission. It integrates the LED driver with constant current output to reduce the complexity and the cost of the transmission module. 42-DL213 can transmit with the speed up to 16Mb/s. 42-DL213 are fabricated by using CMOS technology with low power consumption purpose. FEATURES 1. TTL interface compatible 2. High speed (up to 16Mb/s) 3. Uniform output waveform 4. Constant current output (4.4mA) 5. Low power consumption 6. Wide range for Supply Voltage (2.7V-5.5V) BLOCK DIAGRAM And APPLICATION CIRCUIT Power 42-DL213 VDD OUT Signal IN VSS Ground SP-DL213-A.001.doc -1- VersionA.001 SILICON TOUCH TECHNOLOGY INC. 42-DL213 ABSOLUTE MAXIMUM RATINGS Item Supply Voltage Input Voltage Operating Temperature Storage Temperature Electrostatic Damage Output Sinking Current Symbol VDD VIN Topr Tstg ESD IOUT Rating -0.5 to +7 -0.5 to VDD +0.5 -40 to +85 -55 to +100 3.5 50 Unit V V kV mA RECOMMENDED OPERATING CONDITIONS ITEM Supply Voltage High Level Input Voltage Low Level Input Voltage SYMBOL VDD VIH VIL MIN. 2.7 2.0 0 TYP. MAX. UNIT 5.5 VDD 0.8 V V V ELECTRICAL CHARACTERISTICS (VDD=5.0V, TA=25, if not mentioned ) ITEM High Level Input Voltage Low Level Input Voltage Input Leakage Current Quiescent Supply Current Output Sinking Current SYMBOL VIH VIL IINH IINL IDDQ IOUT_ON CONDITIONS MIN. TYP. MAX. UNIT VDD = 3V or 5V VDD = 3V or 5V VIN =VDD VIN = VSS VIN =VSS VDD=3V or 5V , VIN=VDD, VFLED=2.0V VDD=3V or 5V, VOUT=3V, VIN=VSS VDD=3V, CLED=15pF, VFLED=2.0V VDD=3 V, CLED=15pF, VFLED=2.0V CLED=15pF, VFLED=2.0V CLED=15pF, VFLED=2.0V NRZ Code, CLED=15pF, VFLED=2.0V 2.0 0 -10 3.5 1 4.4 VDD 0.8 10 3 5.3 V V uA uA mA mA Output Leakage Current IOUT_OFF - - 5 uA Propagation Delay Rise Time, Fall Time of IOUT Pulse Width Distortion Jitter of Output Current Data Rate TPLH , TPHL - - 100 ns Tr, Tf tw tj FDATA - 25 0 1 20 25 25 16 ns ns ns Mb/s - - SP-DL213-A.001.doc -2- VersionA.001 SILICON TOUCH TECHNOLOGY INC. 42-DL213 PAD DESCRIPTIONS PAD NO. 1 2 3 4 PAD NAME IN OUT VDD VSS DESCRIPTIONS Input Pad(Active High ) Output Pad Sinking Current(Active Low) Supply Voltage Ground DIE CONFIGURATION (510, 549) 42-DL213 1. IN 4. VSS Center (195.8, 445.85) Center (401.6, 449.85) 2. VDD Center (102.15, 102.25) 3. OUT Center (406.25, 102.2) (0, 0) Die Size: 510um * 549um Die Thickness: 12mil(=300um) Pad Size: 100um * 100um Unitum * Note: SiTI reserves the right to improve the device geometry and manufacturing processes without prior notice. Though these improvements may result in slight geometry changes, they will not affect die electrical characteristics and pad layouts. SP-DL213-A.001.doc -3- VersionA.001 SILICON TOUCH TECHNOLOGY INC. 42-DL213 REQUIREMENTS FOR WAFER DELIVERY Material Silicon with P-Substrate Diameter 6 inches(15cm) Thickness 12 mils(300um) Malfunctioned dieMarked with red ink or equivalent marking HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION (1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during moving, storing and processing 42-DL213. (2) Process 42-DL213 in a clean room with proper temperature and humidity. (3) Ground all working machines and workers wear anti-electrostatic ring to ground during processing. (4) Avoid contact 42-DL213with bare hands .If unavoided, wear anti-electrostatic ring and use anti-electrostatic tool to pick it up. GUARANTED TEMPERATURE AND RETENTION CYCLE (1) The device/wafer 42-DL213 should be stored in the nitrogenous chest. The conditions suggested are as follows: Temperature = 233 Relative Humidity = 5010% Minimum nitrogen inflow = 3 liters/minute (2) If the device/wafer, 42-DL213 is incidentally exposed to the air, use it for manufacturing as soon as possible. (3) Under the storage environment specified in item (1), six-month safe storage period is guaranteed. SP-DL213-A.001.doc -4- VersionA.001 SILICON TOUCH TECHNOLOGY INC. 42-DL213 The products listed herein are designed for ordinary electronic applications, such as electrical appliances, audio-visual equipment, communications devices and so on. Hence, it is advisable that the devices should not be used in medical instruments, surgical implants, aerospace machinery, nuclear power control systems, disaster/crime-prevention equipment and the like. Misusing those products may directly or indirectly endanger human life, or cause injury and property loss. Silicon Touch Technology, Inc. will not take any responsibilities regarding the misusage of the products mentioned above. Anyone who purchases any products described herein with the above-mentioned intention or with such misused applications should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its distributors and all their officers and employees shall defend jointly and severally against any and all claims and litigation and all damages, cost and expenses associated with such intention and manipulation. SP-DL213-A.001.doc -5- VersionA.001 |
Price & Availability of DL213
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |