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| 30 10V 25 20 5V 4.5V 20 Vds=5V 15 Id (A) Id (A) 4V 15 10 Vgs=3.5V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 50 10 125C 5 25C 0 2 2.5 3 3.5 4 4.5 Vgs (Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 45 1.6 Vgs=10V Id=8A Rds(on) (m:) 40 35 30 Vgs=4.5V 1.4 Vgs=4.5V Id=6A Vgs=10V 25 20 0 4 8 12 16 20 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 Id=8A 1.0E+01 1.0E+00 125C Rds(on) (m:) 70 60 50 40 30 20 10 2 4 25C 125C 1.0E-01 Is (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Vsd (Volts) Figure 6: Body-Diode Characteristics 700 10 8 Vds=20V Id=8A 600 Ciss 6 4 2 Capacitance (pF) 500 400 300 200 100 Coss Crss Vgs (Volts) 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Tj(max.)=175C, Ta=25C 10Ps 10.0 Rds(on) limited 1ms 10ms 1.0 DC 100Ps 0 0 5 20 25 30 35 Vds (Volts) Figure 8: Capacitance Characteristics 10 15 40 200 160 Tj(max.)=175C Ta=25C Power (W) Id (Amps) 120 80 40 0 0.0001 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZTjc Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Tc+Pdm.ZTjc.RTjc RTjc=7.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 10 25 20 15 10 5 0 0.0001 0.001 0 25 50 75 100 125 150 175 Tcase (C) Figure 13: Power De-rating (Note B) Id(A), Peak Avalanche Current 8 6 4 2 0 0.00001 Ta=25C ta L Id BV V dd Time in avalanche, ta (s) Figure 12: Single Pulse Avalanche capability 10 8 Power Dissipation (W) 50 Ta=25C 40 Current rating ID(A) Power (W) 0 25 50 75 100 125 150 175 6 4 2 0 Tcase (C) Figure 14: Current De-rating (Note B) 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZTja Normalized Transient Thermal Resistance 1 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Single Pulse Ton 0.001 0.00001 T 100 1000 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 30 -10V 25 -6V 20 -5V -4.5V 25 Vds=-5V 20 15 10 -Id (A) Vgs=-4V 15 10 5 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 80 70 Vgs=-4.5V -3V -Id (A) -3.5V 5 125C 25C 0 0 1 2 3 4 5 -Vgs (Volts) Figure 2: Transfer Characteristics 1.80 Normalized On-Resistance 1.60 1.40 1.20 1.00 0.80 Vgs=-10V Id=-8A Rds(on) (m:) 60 50 40 Vgs=-10V 30 20 0 4 8 12 16 20 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=-4.5V Id=-6A 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 120 Id=-8A 100 1.0E+01 1.0E+00 125C 1.0E-01 Rds(on) (m:) -Is (A) 80 125C 1.0E-02 1.0E-03 25C 1.0E-04 60 40 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 20 2.00E+00 4.00E+00 6.00E+00 8.00E+00 1.00E+01 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 10 Vds=-20V Id=-8A Capacitance (pF) 1200 1000 800 600 400 Coss 200 0 0 8 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 4 16 0 Crss 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 Ciss 8 -Vgs (Volts) 6 4 2 0 100.0 Tj(max.)=175C, Ta=25C 10Ps -Id (Amps) Power (W) 10.0 Rds(on) limited 100Ps 1.0 DC 1ms 200 160 120 80 40 0 0.0001 Tj(max.)=175C Ta=25C 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZTjc Normalized Transient Thermal Resistance 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T Tj,pk=Tc+Pdm.ZTjc.RTjc RTjc=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 10 -Id(A), Peak Avalanche Current ta 8 Power Dissipation (W) L Id BV V dd 60 50 40 30 20 10 0 6 4 Ta=25C 2 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, ta (s) Figure 12: Single Pulse Avalanche capability T case (C) Figure 13: Power De-rating (Note B) 10 8 6 4 2 0 0 25 50 75 100 125 150 175 T case (C) Figure 14: Current De-rating (Note B) 60 50 40 30 20 10 0 0.001 Ta=25C Current rating -Id(A) Power (W) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZTja Normalized Transient Thermal Resistance 1 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Single Pulse Ton 0.001 0.00001 T 100 1000 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) |
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