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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1129 DESCRIPTION *With TO-220 package *Complement to type 2SC2654 *Low collector saturation votage APPLICATIONS *For low-frequency power amplifiers and mid-speed switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -30 -30 -7 -7 -15 -3.5 40 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-3A ;IB=-0.1A IC=-5A ;IB=-0.5A IC=-3A ;IB=-0.1A IC=-5A ;IB=-0.5A VCB=-30V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-1V IC=-5A ; VCE=-1V 40 20 MIN SYMBOL VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO IEBO hFE-1 hFE-2 2SA1129 TYP. MAX -0.3 -0.6 -1.5 -2.0 -10 -10 200 UNIT V V V V A A Switching times ton ts tf Turn-on time Storage time Fall time IC=-5.0A IB1=-0.5 A ,IB2=0.5A VCC=20V, RL=4.0? 1.0 2.5 1.0 s s s hFE-1 Classifications M 40-80 L 60-120 K 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1129 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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