View APT44F80B2_4507239.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT44F80B2 APT44F80L
800V,47A,0.21Maxtrr370ns
N-ChannelFREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
T-Max(R)
TO-264
APT44F80B2
APT44F80L
D
Single die FREDFET G
S
FEATURES
*FastswitchingwithlowEMI *Lowtrrforhighreliability *UltralowCrssforimprovednoiseimmunity *Lowgatecharge *Avalancheenergyrated *RoHScompliant
TYPICAL APPLICATIONS
* ZVSphaseshiftedandotherfullbridge *Halfbridge *PFCandotherboostconverter * Buckconverter *Singleandtwoswitchforward *Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current
1
Ratings 47 29 173 30 1980 24
Unit
A
Gate - Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ, TSTG TL WT Torque Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Min -55 Typ .11 0.22 6.2 Max 1135 .11 150 300 10 1.1 Unit W C/W
C oz g in*lbf N*m
Rev C 05-2009 050-8161
Mounting Torque (TO-264 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS Parameter Drain-Source Breakdown Voltage
TJ=25Cunlessotherwisespecified
Test Conditions VGS = 0V, ID = 250A
Reference to 25C, ID = 250A
APT44F80B2_L
Typ 0.87 0.17 2.5 4 -10 250 1000 100 0.21 5 Max Unit V V/C V mV/C A nA
Min 800
Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
VGS = 10V, ID = 24A VGS = VDS, ID = 2.5mA VDS = 800V VGS = 0V TJ = 25C TJ = 125C
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
VGS = 30V
DynamicCharacteristics
Symbol Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance
4 5
TJ=25Cunlessotherwisespecified
Test Conditions VDS = 50V, ID = 24A VGS = 0V, VDS = 25V f = 1MHz Min Typ 43 9330 160 930 440 220 305 51 155 55 ResistiveSwitching VDD = 400V, ID = 24A RG = 4.7 , VGG = 15V
6
Max
Unit S
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
pF
Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0V, VDS = 0V to 533V
VGS = 0 to 10V, ID = 24A, VDS = 400V
nC
75 230 70
ns
Source-DrainDiodeCharacteristics
Symbol IS ISM VSD trr Qrr Irrm dv/dt
050-8161 Rev C 05-2009
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
1
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
G S D
Min
Typ
Max 47 173 1.0
Unit A V nS C A
ISD = 24A, TJ = 25C, VGS = 0V TJ = 25C
ISD = 24A 3
320 590 1.91 5.18 12.1 18.1
370 710
TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C
diSD/dt = 100A/s VDD = 100V
ISD 24A, di/dt 1000A/s, VDD = 400V, TJ = 125C
25
V/ns
1 2 3 4 5
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25C, L = 6.9mH, RG = 25, IAS = 24A. Pulse test: Pulse Width < 380s, duty cycle < 2%. Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
APT44F80B2_L
V
GS
= 10V
TJ = -55C
T = 125C
J
V
GS
= 10&15V
6V 5.5V
ID, DRAIN CURRENT (A)
TJ = 25C
ID, DRIAN CURRENT (A)
5V
TJ = 150C TJ = 125C
4.5V 4V
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure1,OutputCharacteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 2.5 2.0 1.5 1.0 0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure3,RDS(ON)vsJunctionTemperature 80 70 gfs, TRANSCONDUCTANCE 60 50 40 30 20 10 00 10 20 30 40 ID, DRAIN CURRENT (A) Figure5,GainvsDrainCurrent
ID = 24A NORMALIZED TO VGS = 10V @ 24A
VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure2,OutputCharacteristics 160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure4,TransferCharacteristics Ciss
TJ = -55C TJ = 25C TJ = 125C
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
20,000 10,000
TJ = -55C TJ = 25C TJ = 125C
C, CAPACITANCE (pF)
1000 Coss 100 Crss
50
10
100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure6,CapacitancevsDrain-to-SourceVoltage
0
160 ISD, REVERSE DRAIN CURRENT (A) 140 120 100 80 60 40 20 0 0
VGS, GATE-TO-SOURCE VOLTAGE (V)
VDS = 160V
TJ = 25C
VDS = 400V
VDS = 640V
TJ = 150C
050-8161
Qg, TOTAL GATE CHARGE (nC) Figure7,GateChargevsGate-to-SourceVoltage
0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure8,ReverseDrainCurrentvsSource-to-DrainVoltage
Rev C 05-2009
APT44F80B2_L
200 100
IDM
200 100 ID, DRAIN CURRENT (A)
IDM
ID, DRAIN CURRENT (A)
10
13s Rds(on) 100s 1ms 10ms TJ = 125C TC = 75C 100ms DC line
10
Rds(on)
13s 100s 1ms 10ms
1
1
TJ = 150C TC = 25C
0.1
1
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure9,ForwardSafeOperatingArea
0.1
Scaling for Different Case & Junction 100ms Temperatures: ID = ID(T = 25C)*(TJ - TC)/125 DC line
C
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure10,MaximumForwardSafeOperatingArea
1
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
0.7 0.5 0.3 0.1 0.05 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
RECTANGULAR PULSE DURATION (seconds) Figure11.MaximumEffectiveTransientThermalImpedanceJunction-to-CasevsPulseDuration
T-MAX(R)(B2)PackageOutline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264(L)PackageOutline
e3 100% Sn Plated
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
050-8161 Rev C 05-2009
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Microsemi'sproductsarecoveredbyoneormoreofU.S.patents4,895,8105,045,9035,089,4345,182,2345,019,5225,262,3366,503,7865,256,583 4,748,1035,283,2025,231,4745,434,0955,528,0586,939,743andforeignpatents.usandForeignpatentspending.AllRightsReserved.

▲Up To Search▲

Price & Availability of APT44F80B2

	To Download APT44F80B2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .