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| EID1414A1-8 UPDATED 07/12/2007 14.00-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES * * * * * * * 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EID1414A1-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics' unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ 2200mA Gain at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ 2200mA Gain Flatness f = 14.00-14.50GHz VDS = 10 V, IDSQ 2200mA Power Added Efficiency at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ 2200mA Drain Current at 1dB Compression f = 14.00-14.50GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance2 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA MIN 38.5 5.5 TYP 39.5 6.5 0.6 27 2800 4200 -1.2 3.5 3600 5760 -2.5 4.0 o MAX UNITS dBm dB dB % mA mA V C/W Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised July 2007 EID1414A1-8 UPDATED 07/12/2007 14.00-14.50 GHz 8-Watt Internally-Matched Power FET CHARACTERISTIC VALUE 10 V -4.5 V IDSS 80 mA @ 3dB compression 35 W 150C -65/+150C ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN). PERFORMANCE DATA Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ 2200mA S11 and S22 0. 6 Swp Max 15GHz 2. 0 0.8 20 S21 and S12 1.0 -1.0 -0.8 -0 .6 -3 .0 -4 - 5. 0 .2 .0 -10. 0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 -0 .4 0 2. S[2,2] * EID1414-8 .6 0. -0 6 -0.8 0. 4 - -1.0 FREQ (GHz) --- S11 --MAG ANG 13.60 13.70 13.80 13.90 14.00 14.10 14.20 14.30 14.40 14.50 14.60 14.70 14.80 14.90 0.4077 0.3666 0.3254 0.2798 0.2373 0.1971 0.1656 0.1424 0.1325 0.1346 0.1456 0.1612 0.1724 0.1832 -145.55 -155.39 -166.06 -178.28 168.69 152.39 132.83 109.53 86.10 61.35 41.09 23.89 9.26 -3.80 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -3 .0 S[1,1] * EID1414-8 Swp Min 13.5GHz - 5. 0 -4 .0 3. 0 4. 5 .0 - 0. 2 0. 2 --- S21 --MAG ANG -10. -0. 0 5 .0 2 S 21 and S 12 (dB ) 0 -0 -2 .0 .4 0. 4 3. 0 10 4. 0 10 .0 0 -10 DB(|S[2,1]|) * EID1414-8 DB(|S[1,2]|) * EID1414-8 10.0 0 10 .0 5.0 4.0 2. 0 3.0 2.0 1.0 1.0 0.8 0.6 0.8 0.4 0.2 2.5516 2.6444 2.6910 2.7499 2.7742 2.7890 2.7922 2.7801 2.7470 2.7206 2.6903 2.6450 2.5955 2.5416 0 -20 -30 13.5 14 Frequency (GHz) 14.5 15 --- S12 --MAG ANG --- S22 --MAG ANG 132.84 123.30 114.68 104.97 95.48 86.00 76.30 66.44 57.12 47.94 38.72 29.91 20.97 12.02 0.0504 0.0528 0.0542 0.0560 0.0561 0.0580 0.0610 0.0601 0.0615 0.0610 0.0610 0.0606 0.0602 0.0587 118.29 105.14 97.21 87.14 76.29 65.56 55.52 46.74 37.32 27.10 15.70 5.80 -2.53 -14.26 0.4354 0.3997 0.3624 0.3259 0.2990 0.2760 0.2647 0.2660 0.2747 0.2865 0.3018 0.3201 0.3389 0.3527 159.24 149.67 138.73 126.21 111.82 96.10 80.39 63.22 48.13 35.06 23.52 13.11 4.09 -4.26 page 2 of 4 Revised July 2007 EID1414A1-8 UPDATED 07/12/2007 14.00-14.50 GHz 8-Watt Internally-Matched Power FET Power De-rating Curve Power Dissipation vs. Temperature 40 35 Total Power Dissipation (W) 30 25 20 15 10 5 0 0 25 50 75 100 Case Temperature (C) 125 150 Safe Operating Region Potentially Unsafe Operating Region Typical Power Data (VDS = 10 V, IDSQ = 2200 mA) 42 41 P-1dB (dBm) P-1dB & G-1dB vs Frequency 11 10 9 8 7 G-1dB (dB) 40 39 38 P-1dB (dBm) 37 13.6 13.8 14.0 14.2 G-1dB (dB) 14.4 6 14.6 Frequency (GHz) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised July 2007 EID1414A1-8 UPDATED 07/12/2007 14.00-14.50 GHz 8-Watt Internally-Matched Power FET PACKAGE OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified SOURCE .060 MIN. Excelics EID1414A1-8 .060 MIN. .650.008 .512 GATE DRAIN .319 YYWW SN .094 .382 .022 .045 .004 .070 .008 .129 ALL DIMENSIONS IN INCHES ORDERING INFORMATION Part Number Grade1 fTest (GHz) P1dB (min) EID1414A1-8 Notes: Industrial 14.00-14.50 GHz 38.5 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised July 2007 |
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