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EIC1010-4 ISSUED 10/29/2008 10.0-10.70GHz 4-Watt Internally-Matched Power FET Excelics EIC1010-4 FEATURES * * * * * * * 10.0-10.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH YYWW SN ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL Freq P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Caution! ESD sensitive device. MIN 10 35.5 6.5 36.5 7.5 0.6 30 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o TYP MAX 10.7 UNITS Ghz dBm dB dB % Frequency Output Power at 1dB Compression VDS = 10 V, IDSQ 1100mA Gain at 1dB Compression VDS = 10 V, IDSQ 1100mA Gain Flatness VDS = 10 V, IDSQ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 1100mA Drain Current at 1dB Compression Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 1300 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA 2. S.C.L. = Single Carrier Level. Note: 1. Tested with 100 Ohm gate resistor. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 48mA -9.6mA 36dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14.4mA -2.4mA @ 3dB Compression 175C -65C to +175C 25W Vds Vgs Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 October 2008 EIC1010-4 ISSUED 10/29/2008 10.0-10.70GHz 4-Watt Internally-Matched Power FET PACKAGES OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified EIC1010-4 (Hermetic) EIC1010-4NH (Non-Hermetic) Excelics EIC1010-4 Excelics EIC1010-4NH YYWW SN YYWW SN ALL DIMENSIONS IN INCHES ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. Caution! ESD sensitive device. ORDERING INFORMATION Part Number EIC1010-4 EIC1010-4NH Notes: Packages Hermetic Non-Hermetic Grade1 Industrial Industrial fTest (GHz) 10.0-10.70GHz 10.0-10.70GHz P1dB (min) 35.5 35.5 IM3 (min)2 -43 -43 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 October 2008 |
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