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| SOT-23 Plastic-Encapsulate Transistors MMBTA42 FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 300 300 5 0.3 0.35 150 -55-150 Units V V V A W 1. BASE 2. EMITTER 3. COLLECTOR TRANSISTOR (NPN) SOT-23 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT Test conditions MIN 300 300 5 0.25 0.1 60 100 60 0.2 0.9 50 V V MHz 200 TYP MAX UNIT V V V A A IC=100A,IE=0 IC=1mA,IB=0 IE=100A,IC=0 VCB=200V,IE=0 VEB=5V,IC=0 VCE=10V,IC=1mA VCE=10V,IC=10mA VCE=10V,IC=30mA IC=20mA,IB=2mA IC=20mA,IB=2mA VCE=20V,IC=10mA,f=30MHz MMBTA42 |
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