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UF2840P
RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
Features
M/A-COM Products Released; RoHS Compliant
Package Outline
* * * * *
N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor
ABSOLUTE MAXIMUM RATINGS AT 25 C
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VDS VGS IDS PD TJ TSTG JC ZIN () 6.0-j20.0 2.5-j5.5 4.0+j3.0 Rating 65 20 4* 116 200 -55 to 150 1.5 Units V V A W C C C/W
TYPICAL DEVICE IMPEDANCES
F (MHz) 100 300 500 ZLOAD () 25.0j27.0 13.0+j13.0 12.0j5.0
VDD=28V, IDQ=500 mA, POUT =40.0 W
ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25C
Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance *Per side Symbol BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP D VSWR-T Min 65 2.0 .5 10 50 Max 1.0 1.0 6.0 45 30 8 20:1 Units V mA A V S pF pF pF dB % Test Conditions VGS = 0.0 V , IDS = 5.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 100.0 mA VDS = 10.0 V , IDS 1.0 A , VGS = 1.0V, 80 s Pulse VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF2840P
RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F=1.0MHz
POPWER OUTPUT (W)
M/A-COM Products Released; RoHS Compliant
40 35 CAPACTANCES (pF) 30 25 20 15 10 5 0 5
50 40 30 20 10 0
POWER OUTPUT VS VOLTAGE PIN=3.0 W IDQ=500 mA POUT=500 W
COSS
CISS
CRSS
10
15 VDS(V)
20
25
30
5
10
15 VDD(V)
20
25
35
30 25 GAIN (dB) 20 15 10 100
GAIN VS FREQUENCY VDD =28 V POUT=40 W IDQ =500 mA
65
EFFICIENCY VS FREQUENCY VDD=28V IDQ =500 mA POUT =40 W
EFFICIENCY (W) 200 300 400 500
60
55
50 100
200
300
400
500
FREQUENCY (MHz)
FREQUENCY (MHz)
60 POWER OUTPUT (W) 50 40 30 10 0 0.1
POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =500 mA
100MHz 300MHz
500 MHz
0.25
1
2
2.5
POWER INPUT (W)
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF2840P
RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
TEST FIXTURE SCHEMATIC
V DS = 2 8 V OL T S I DQ = 5 00mA V GS J3 L1 L4 C12 C9 C10 L2 R1 C11 R3 C13 + V DD J4 C14
M/A-COM Products Released; RoHS Compliant
R2 Q1A RF I N J1 C5 T1 T2 C2 C3 C4 Q1B
L3
C7 RF OUT J2
T3 C8 C6
C1
TEST FIXTURE SCHEMATIC
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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