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CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 1/9
BTD1858A3
Description
* High BVCEO * High current capability * Pb-free package
Symbol
BTD1858A3
Outline
TO-92
BBase CCollector EEmitter
ECB
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 180 5 1.5 3 750 150 -55~+150 Unit V V V A A mW C C
BTD1858A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 180 5 180 30 Typ. 0.15 140 27 Max. 1 1 0.3 0.4 0.8 560 Unit V V V A A V V V MHz pF
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 2/9
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100mA IC=1A, IB=50mA VCE=5V, IC=5mA VCE=5V, IC=200mA VCE=5V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification of hFE 1
Rank Range Q 180~390 R 270~560
Ordering Information
Device BTD1858A3 Package TO-92 (Pb-free) Shipping 2000 pcs / Tape & Box Marking D1858
BTD1858A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Output Characteristics
0.2 Collector Current---IC(A)
IB=500uA
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 3/9
Output Characteristics
0.7 Collector Current---IC(A) 0.6 0.5 0.4
IB=1mA IB=2.5mA IB=2mA IB=1.5m
0.15
IB=400uA IB=300uA
0.1
IB=200uA
0.3 0.2 0.1
IB=0.5mA
0.05
IB=100uA IB=0
IB=0
0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6
0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6
Output Characteristics
1.2
IB=10mA
Output Characteristics
1.6 1.4 Collector Current---IC(A) 1.2 1 0.8 0.6 0.4 0.2 0 0
IB=0 IB=25mA IB=20mA IB=15mA IB=10mA IB=5mA IB=8m IB=6mA IB=4mA IB=2mA
Collector Current---IC(A)
1 0.8 0.6 0.4 0.2
IB=0
0 0 2 4 Collector-to-Emitter Voltage---VCE(V) 6
1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
VCE=5V
Saturation Voltage vs Collector Current
100000 Saturation Voltage---(mV)
VCE(SAT)
Current Gain---HFE
10000
IC=30IB
100
VCE=2V
1000
IC=50IB
VCE=1V
100
IC=10IB
IC=20I
10 1 10 100 1000 Collector Current---IC(mA) 10000
10 1 10 100 1000 Collector Current---IC(mA) 10000
BTD1858A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Saturation Voltage vs Collector Current
10000 Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 4/9
On Voltage vs Collector Current
1000
On Voltage---(mV)
VBE(on)@VCE=5
1000
100 1 10 100 1000 Collector Current---IC(mA) 10000
100 1 10 100 1000 Collector Current---IC(mA) 10000
Power Derating Curve
800
Output Capacitance vs Reverse Biased Voltage
100
Power Dissipation---PD(mW)
600 500 400 300 200 100 0 0 50 100 150 Ambient Temperature---TA() 200
Output capacitance---Cob(pF)
10 0.1 1 10 100 Reverse Biased Voltage---VCB(V)
700
Safe Operating Area
10
PT=10ms
Forward Current---IC(A)
1
PT=1ms
0.1
PT=100ms
0.01
PT=1s
0.001 1.0 10.0 100.0 1000.0 Forward Voltage---VCE(V)
BTD1858A3
CYStek Product Specification
CYStech Electronics Corp.
Product Designation
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 5/9
BTD1858A3
CYStek Product Specification
CYStech Electronics Corp.
Recommended IR reflow profile
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 6/9
Average ramp-up rate(25 to 150) Preheat temperature 150~180 Temperature maintained above 220 Time within 5 of actual peak temperature Peak temperature range Ramp-down rate Time 25 to peak temperature
1~4 /second 60~90 seconds 30 seconds min. 3~5 seconds 255+0/-5 2~10 /second 6 minutes max.
BTD1858A3
CYStek Product Specification
CYStech Electronics Corp.
Recommended temperature profile for wave soldering
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 7/9
Recommendation: 1. Preheat temperature at solder side must be between 100 and 130 for 80 to 100 seconds. 2. Temperature ramp-up rate : 1~2 /s 3. The temperature gradient between preheat and wave soldering must be smaller than +100 . 4. Terminations must go through the wave simultaneously. 5. Travel through the wave from 255 to 260 for 2.5 to 3.5 seconds 6. Temperature ramp-down rate : 2~3 /s
BTD1858A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Taping Outline
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 8/9
DIM A D D1 D2 E F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 -
Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch
Millimeters Min. 4.33 3.80 0.36 4.33 1.5 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.0 2.90 0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255
BTD1858A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
Marking: Product Name
Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 9/9
A B
1 2 3
2
HFE Rank D1858
3
Date Code: Year+Month Year: 42004, 52005 Month: 11, 22, , 99, A10, B11, C12
C
D
H I E F
G
1
Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1858A3
CYStek Product Specification

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