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| CMT60N06G N-CHANNEL Logic Level Power MOSFET APPLICATION DC motor control UPS Class D Amplifier VDSS 60V RDS(ON) Typ. 15.8m ID 60A FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PIN CONFIGURATION TO-220 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current Continuous Tc = 25, VGS@10V Continuous Tc = 100, VGS@10V Pulsed Tc = 25, VGS@10V (Note 2) Gate-to-Source Voltage Continue Total Power Dissipation Derating Factor above 25 Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=144H,ID=40 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating dv/dt TJ, TSTG EAS TL TPKG IAS Symbol VDSS ID ID IDM VGS PD Value 60 60 43 241 20 150 1.0 4.5 -55 to 175 500 300 260 60 V W W/ V/ns mJ A Unit V A THERMAL RESISTANCE Symbol RJC RJA Parameter Junction-to-case Junction-to-ambient Min Typ Max 1.0 62 Units /W /W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175 1 cubic foot chamber, free air 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 1 CMT60N06G N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number CMT60N06G Package TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT60N06G Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Breakdown Voltage Temperature Coefficient (Reference to 25, ID = 250 A) Drain-to-Source Leakage Current (VDS = 60 V, VGS = 0 V, TJ = 25) (VDS = 48 V, VGS = 0 V, TJ = 150) Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 60A) Forward Transconductance (VDS = 15 V, ID = 60A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge (IS = 60 A, VGS = 0 V) (IF = 60A, VGS = 0 V, di/dt = 100A/s) Integral pn-diode in MOSFET ISM VSD trr Qrr 55 110 241 1.5 A V ns nC (Note 4) Dynamic Characteristics (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDS = 30 V, ID = 60 A, VGS = 10 V) (Note 5) Ciss Coss Crss Qg Qgs Qgd Resistive Switching Characteristics (VDD = 30 V, ID = 60 A, VGS = 10 V, RG = 9.1) (Note 5) td(on) trise td(off) tfall IS 12.1 64 69 39 60 ns ns ns ns A 1430 420 88 37.7 8.4 9.8 pF pF pF nC nC nC gFS (Note 4) RDS(on) 15.8 36 18 S m VGS(th) 1.0 2.0 3.0 V IGSS -100 nA IGSS IDSS 25 250 100 nA A VDSS/TJ 0.069 mV/ VDSS 60 V Symbol Min Typ Max Units Source-Drain Diode Characteristics Note 1: TJ = +25 to +175 Note 2: Repetitive rating; pulse width limited by maximum junction temperature. Note 3: ISD = 60A, di/dt <100A/s, VDD < BVDSS, TJ = +175 Note 4: Pulse width < 250s; duty cycle<2% Note 5: Essentially independent of operating temerpature. 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 2 CMT60N06G N-CHANNEL Logic Level Power MOSFET 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 3 CMT60N06G N-CHANNEL Logic Level Power MOSFET 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 4 CMT60N06G N-CHANNEL Logic Level Power MOSFET 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 5 CMT60N06G N-CHANNEL Logic Level Power MOSFET PACKAGE DIMENSION TO-220 D A c1 F E PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 e1 e b A1 c Side View L1 Front View 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 6 CMT60N06G N-CHANNEL Logic Level Power MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. customer should provide adequate design and operating safeguards. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the HsinChu Headquarter 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 7 |
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