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| LS4148/LS4448/LS914B 500mW High Speed SMD Switching Diode Small Signal Diode QUADRO Mini-MELF (LS34) HERMETICALLY SEALED GLASS C Features Fast switching device(Trr<4.0nS) Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant All External Surfaces are Corrosion Resistant and Leads are Readily Solderable A B E D Mechanical Data Case : QUADRO Mini-MELF Package (JEDEC DO-213) High temperature soldering guaranteed : 270C/10s Polarity : Indicated by cathode band Weight : 29 2.5 mg Dimensions A B C D E Unit (mm) Min 3.30 1.40 0.25 1.25 Max 3.70 1.60 0.40 1.40 Unit (inch) Min Max 0.130 0.146 0.055 0.063 0.010 0.016 0.049 0.055 0.071 1.80 Ordering Information Part No. LSxxxx L1 LSxxxx L0 Package QUADRO Mini-MELF QUADRO Mini-MELF Packing 2.5Kpcs / 7" Reel 10Kpcs / 13" Reel Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Non-Repetitive Peak Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Surge Current Non-Repetitive Peak Forward Current Mean Forward Current Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Symbol PD VRSM VRRM IFSM IFM IO RJA TJ, TSTG Value 500 100 75 2 450 150 300 -65 to + 200 Units mW V V A mA mA C/W C Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage LS4448, LS914B LS4148 LS4448, LS914B Reverse Leakage Current Junction Capacitance Reverse Recovery Time (Note 2) IF=5.0mA IF=10.0mA IF=100.0mA VR=20V VR=75V VR=0, f=1.0MHz IR CJ Trr VF 0.62 0.72 1.0 1.0 25 5.0 4.0 4.0 nA A pF ns V IR=100uA IR=5uA Symbol V(BR) Min 100 75 Max Units V Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100, IRR=1mA Version : C09 LS4148/LS4448/LS914B 500mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics 100 FIG 2 Reverse Current vs Reverse Voltage 100 Instantaneous Forward Current (A) Reverse Current (uA) 10 1 10 Ta=25C 1 Ta=25C 0.1 0.01 0.1 0.001 0 0.2 Instantaneous Forward Volatge (V) 0.4 0.6 0.8 1 1.2 1.4 1.6 0.01 0 20 Reverse Volatge (V) 40 60 80 100 120 FIG 3 Admissible Power Dissipation Curve 500 1.5 FIG 4 Typical Junction Capacitance Junction Capacitance (pF) 0 25 50 75 100 125 150 175 200 Power Dissipation (mW) 400 300 200 100 0 1.2 0.9 0.6 0.3 0 0 5 10 15 20 25 30 Ambient Temperature (C) Reverse Voltage (V) FIG 5 Forward Resistance vs. Forward Current 10000 Dynamic Forward Resistance () 1000 100 10 1 0 0 Forward Current (mA) 1 10 100 Version : C09 |
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