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| SMG2301 -2.6A, -20V,RDS(ON) 130m [ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & RoHS compliant A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description The SMG2301 is universally preferred for all commercial industrial surface mount application and suited for low S 2 L 3 Top View B 1 B C D voltage applications such as DC/DC converters. D G G H C J K Features * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged H Drain Gate Source J K L S Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System D All Dimension in mm G Marking : 2301 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -20 12 -2.6 -2.1 -10 1.38 0.01 -55~+150 Unit V V A A A W W/ C o o 3 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG2301 Elektronische Bauelemente -2.6A, -20V,RDS(ON) 130m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance 2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -20 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C ,ID=-1mA VDS=VGS, ID=-250uA VGS= 12V VDS=-20V,VGS=0 VDS=-16V,VGS=0 VGS=-5.0V, ID=-2.8A VGS=-2.8V, ID=-2A o -0.1 _ _ _ _ _ _ -0.5 _ _ _ _ _ 100 -1 -10 130 190 10 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2 5.2 1.36 0.6 5.2 9.7 19 29 295 170 65 4.4 nC ID=-2.8A VDS=-6.0V VGS=-5.0V _ _ _ _ VDS=-15V ID=-1A nS VGS=-10V RG=6[ RD=15[ _ _ _ pF VGS=0V VDS=-6V f=1.0MHz _ _ S VDS=-5V, ID=-2.8A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Is ISM Min. _ _ Typ. _ _ Max. -1.2 -1 Unit V Test Condition IS=-1.6A, VGS=0V. VD=VGG=0V, VS=-1.2V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) A _ _ -10 A Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG2301 Elektronische Bauelemente [ -2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG2301 Elektronische Bauelemente -2.6A, -20V,RDS(ON) 130m[ P-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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