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| AGR21125E 125 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. 7 Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21125EU AGR21125EF Sym Ri JC Ri JC Value 0.5 0.5 Unit C/W C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C: AGR21125EU AGR21125EF Derate Above 25 C: AGR21125EU AGR21125EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS -0.5, +15 Vdc PD PD -- -- TJ 350 350 2.0 2.0 200 W W W/C W/C C AGR21125EU (unflanged) AGR21125EF (flanged) 48 5 Figure 1. Available Packages Features Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 - 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 - 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: -- Output power: 28 W. -- Power gain: 14 dB. -- Efficiency: 27%. -- IM3: -34.5 dBc. -- ACPR: -38 dBc. -- Return loss: -10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 125 W continuous wave (CW) output power. Large signal impedance parameters available. TSTG -65, +150 C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR21125E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR21125E 125 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics 200 Drain-source Breakdown Voltage (VGS = 0, ID = 400 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 A) Gate Quiescent Voltage (VDS = 28 V, ID = 1200 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) Table 5. RF Characteristics Parameter Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Common-source Amplifier Power Gain* CRSS -- 3.0 -- pF Symbol Min Typ Max Unit GFS VGS(TH) VGS(Q) VDS(ON) -- -- -- -- 9 -- 3.8 0.08 -- 4.8 -- -- S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 4 200 12 Vdc Adc Adc Symbol Min Typ Max Unit Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) Drain Efficiency* GPS IM3 ACPR IRL 12 -- 25 14 27 -- -- dB dBc dBc dB W % Input Return Loss* Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 - 5 MHz and f2 + 5 MHz) Third-order Intermodulation Distortion* (IMD3 measured over 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz) -34.5 -38 -10 125 -33 -37 -9 -- -- -- Power Output, 1 dB Compression Point (VDD = 28 V, fC = 2140.0 MHz) P1dB 115 Output Mismatch Stress (VDD = 28 V, POUT = 125 W (CW), IDQ = 1200 mA, fC = 2140.0 MHz VSWR = 10:1; [all phase angles]) No degradation in output power. * 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135.0 MHz, and f2 = 2145 MHz. VDD = 28 Vdc, IDQ = 1200 mA, and POUT = 28 W avg. AGR21125E 125 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR21125E FB1 VGG R1 R2 + C2 C3 C4 + C5 Z6 Z7 2 Z14 1 DUT 3 + PINS: 1. DRAIN, 2. GATE, 3. SOURCE + C18 Z8 Z9 Z10 Z11 Z12 C16 Z13 RF OUTPUT VDD R3 + + VDD C12D C9D C8D C6A C7A C8A C9A C10A C11A C12A C13A C14A C15A Z1 RF INPUT C1 Z2 Z3 Z4 Z5 C12C C9C C8C C6B C7B C8B C9B C10B C11B C12B C13B C14B C15B A. Schematic Parts List: Microstrip Line: Z1 0.785 in. x 0.065 in. Z2 0.205 in. x 0.065 in. Z3 0.070 in. x 0.255 in. Z4 0.315 in. x 0.065 in. Z5 0.240 in. x 0.860 in. Z6 0.050 in. x 0.467 in. Z7 0.050 in. x 0.367 in. Z8 0.500 in. x 1.050 in. Z9 0.248 in. x 0.185 in. Z10 0.075 in. x 0.320 in. Z11 0.465 in. x 0.115 in. Z12 0.075 in. x 0.065 in. Z13 0.252 in. x 0.065 in. Z14 0.050 in. x 0.367 in. WB1, WB2; 10 mil thick, 0.6 in. x 0.18 in. Fair-Rite (R) ferrite bead: FB1 2743019447. Vitramon (R) 1206 size chip capacitor: C3, C9A, C9B, C9C, C9D 22000 pF. 1206 size chip capacitor: 22000 pF C12A, C12B, C12C, C12D, C13A, C13B. 1206 size chip resistor: R1 1 k; R2 560 k; R3 4.7 . Taconic(R) ORCER RF-35 board material, 2 oz. copper, 30 mil thickness, r = 3.5. 2 3 1 ATC(R) chip capacitor: C1 10 pF 100B100JW500X; C5, C14A, C14B, C15A, C15B 5.6 pF100B5R6BW500X; C6A, C6B 6.8 pF 100B6R8JW500X; C7A, C7B 1.2 pF 100B1R2BW500X; C16 15 pF 100B150JW500X. Murata(R) 0805 size chip capacitor: C8A, C8B, C8C, C8D 0.01 F GRM40X7R103K100AL. Sprague(R) tantalum surface-mount chip capacitor: C2, C4, C10A, C10B, C11A, C11B 22 F, T491, 35 V. Johanson Giga-Trim(R) variable capacitor: C18 0.6 pF to 4.5 pF 27271SL. B. Component Layout Figure 2. AGR21125E Test Circuit AGR21125E 125 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 180 170 U CT 0.6 Z0 = 10 IN D 90 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 LOA D < 0.2 0.49 OW A RD 7 HST 0.4 N GT -170 EL E AV W 0 < -90 -16 0.1 0.4 0.48 ) / Yo (-jB CE 0.6 -85 AN PT CE US ES 1. 0 0.2 6 0.4 4 0.0 0 -15 -80 IV CT IN DU 0.3 -75 R 5 0.4 -70 06 0. -65 0.6 -60 1.6 0.7 1.4 0.8 1.2 5 0.9 -5 1.0 0 -5 5 -4 MHz (f ) 2110 (f1) 2140 (f2) 2170 (f3) ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 3.8 - j8.7 1.4 + j0.7 3.4 - j8.2 1.4 + j0.8 3.3 - j7.7 1.3 + j0.9 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances F 0. 32 0. 1.8 18 0 -5 -25 4 4 0. 5 0. 0.3 0.1 3 2. 0 7 -30 -60 0.3 0.1 4 6 -3 -70 5 0.35 0.15 0.36 0.14 -80 -4 0 0.37 0.13 0.4 0.2 -90 0.12 0.38 0.11 -100 0.39 CA P AC I TI 0.1 0.4 -110 VE RE AC TA N 0.0 0 9 .41 -12 CE CO M 0 0.0 PO N 0.4 8 2 EN T (-j -1 0. 40 4 Z X/ ZS -20 f3 f1 ,O o) 5 0.0 -10 0. 8 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 20 10 5.0 -15 4.0 3. 0 1. 0 0.8 0.6 0.2 f1 0.4 f3 ZL 0. 0.2 0.3 -4 0 8 -1 10 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES L E OF ANG 0. 07 30 0. 43 0.1 20 50 -20 0.2 2 0.2 8 0.2 9 0.2 1 -30 0. 19 0. 31 AGR21125E 125 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 15.00 14.50 POWER GAIN (dB) S 14.00 13.50 13.00 12.50 12.00 11.50 11.00 1 IDQ = 1200 mA IDQ = 1000 mA IDQ = 800 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz TWO-TONE MEASUREMENT 10 MHz TONE SPACING IDQ = 1600 mA IDQ = 1400 mA 10 100 1000 OUTPUT POWER (W) PEP Figure 4. Two-Tone Power Gain vs. Output Power and IDQ -20.00 -25.00 IMD3, THIRD ORDER (dBc) s -30.00 -35.00 -40.00 -45.00 -50.00 -55.00 -60.00 -65.00 -70.00 1 10 IDQ = 1200 mA IDQ = 1400 mA IDQ = 800 mA IDQ = 1000 mA IDQ = 1600 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz TWO-TONE MEASUREMENT 10 MHz TONE SPACING 100 1000 OUTPUT POWER (W) PEP Figure 5. IMD3 vs. Output Power and IDQ AGR21125E 125 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0 -5 -10 -15 -20 IMD (dBc) -25 -30 -35 -40 -45 -50 -55 -60 0.1 1 10 100 VDD = 28 V, POUT = 130 W PEP, FO = 2140 MHz IM3 IM5 IM7 TWO-TONE SPACING (MHz) Figure 6. IMD vs. Tone Spacing 20 18 16 14 12 10 8 6 4 2 0 50 45 DRAIN EFF 40 35 30 20 15 10 5 0 EFF (%), IMD3 (dBc), ACPR (dBc)S 25 GAIN 2 CARRIER W-CDMA 3 GPP, PEAK TO AVG. = 8.5 dB @ 0.01% CCDF, 10 MHz SPACING 3.84 MHz CBW, POUT = 28 W, VDD = 28 V, IDQ = 1200 mA GAIN (dB)S -5 -10 -15 -20 -25 -30 -35 IMD3 ACPR 15 20 25 30 35 40 -40 -45 -50 OUTPUT POWER (WATTS-AVERAGE)S Figure 7. Gain, Efficiency, IMD3, and ACPR vs. Output Power AGR21125E 125 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 20 18 16 14 GAIN (dB)S 12 10 8 6 4 2 0 2100 IMD3 ACPR 2110 2120 2130 2140 2150 2160 2170 GAIN 2 CARRIER W-CDMA 3 GPP, PEAK TO AVG. = 8.5 dB @ 0.01% CCDF, 10 MHz SPACING, 3.84 MHz CBW, POUT = 28 W, VDD = 28 V, IDQ = 1200 mA RL EFF 50 45 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 2180 FREQUENCY (MHz)S Figure 8. Broadband Performance 20 10 0 -10 -20 -30 -40 -50 -60 -70 -80 2 CARRIER W-CDMA 3GPP, PEAK-TO-AVG = 8.5 dB @ 0.01% CCDF 10 MHz SPACING, 3.84 MHz CBW, POUT = 28 W, VDD = 28 V, IDQ = 1200 mA F1 F2 IMD3 IMD3 ACPR ACPR Carrier 2.1625 GHz 5 MHz Span 50 MHz Figure 9. Spectral Plot EFF (%), RL (dB), IMD3 (dBc), ACPR (dBc)S AGR21125E 125 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 14.5 4 2 0 PHASE (DEGREES) -2 13.5 AM-PM (PHASE [DEGREES]) VDD = 28 Vdc FO = 2140 MHz IDQ = 1200 mA CW INPUT -4 -6 -8 -10 -12 -14 30 40 50 -16 14 POWER GAIN (dB) AM-AM (POWER GAIN [dB]) 13 12.5 12 0 10 20 INPUT POWER PIN (dBm) Figure 10. AM-AM and AM-PM Characteristics AGR21125E 125 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. Cut lead indicates drain. AGR21125EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES M-AGR21125U AGR21125XU YYWWUR XXXXX YYWWUR ZZZZZZZ 3 1 ZZZZZZZ 2 3 2 AGR21125EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES M-AGR21125F AGR21125XF YYWWUR YYWWUR XXXXX ZZZZZZZ ZZZZZZZ 2 AGERE 1 3 3 2 Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last two letters of the part number denote wafer technology and package type. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok, Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. |
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