View APTGL325DA120D3G_4545402.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGL325DA120D3G
Boost chopper
Trench + Field Stop IGBT4 Power Module
3
VCES = 1200V IC = 325A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Q2 6 7
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 420 325 600 20 1500 600A @ 1100V Unit V A V W
September, 2008 1-5 APTGL325DA120D3G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGL325DA120D3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 300A Tj = 125C VGE = VCE , IC = 11mA VGE = 20V, VCE = 0V Min Typ 1.8 2.2 5.8 Max 5 2.2 6.5 400 Unit mA V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= -8V / 15V ; VCE=600V IC=300A Inductive Switching (25C) VGE = 15V VCE = 600V IC = 300A RG = 1.5 Inductive Switching (150C) VGE = 15V VCE = 600V IC = 300A RG = 1.5 VGE = 15V TJ = 150C VCE = 600V IC = 300A TJ = 150C RG = 1.5 VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 18.6 1.16 1 1.7 200 40 380 70 220 50 450 80 27 29 1200 ns Max Unit nF C
ns
mJ mJ A
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 300A VR = 600V di/dt = 7000A/s IF = 300A VGE = 0V Test Conditions VR=1200V Tj = 25C Tj = 150C TC = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 1200 Typ Max 250 2000 300 1.7 1.65 155 300 29 61 13 24 2.2 Unit V A A V ns C mJ
September, 2008 2-5 APTGL325DA120D3G - Rev 0
www.microsemi.com
APTGL325DA120D3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.10 0.17 175 125 125 5 5 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D3 Package outline (dimensions in mm)
1
A
DETAIL A
www.microsemi.com
3-5
APTGL325DA120D3G - Rev 0
September, 2008
APTGL325DA120D3G
Typical Performance Curve
600 500 400 IC (A) 300 200 100 0 0 1 2 VCE (V) Transfert Characteristics
TJ=25C TJ=25C
Output Characteristics (VGE=15V)
Output Characteristics 600 500 400 IC (A) TJ = 150C
VGE=19V VGE=15V
TJ=150C
300 200 100 0
VGE=9V
3
4
0
1
2 VCE (V)
3
4
600 500 400 IC (A)
80
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 1.5. TJ = 150C Eon
60 E (mJ)
300 200 100 0 5 6 7 8 9 10 11 12 13 VGE (V) Switching Energy Losses vs Gate Resistance 90 75 60
VCE = 600V VGE =15V IC = 300A TJ = 150C TJ=150C
40
Err
Eoff
20
0 0 100 200 300 IC (A) Reverse Bias Safe Operating Area 600
Eon
400
500
600
450 IC (A) 300 150 0
VGE=15V TJ=150C RG=1.5
E (mJ)
45
Eoff
30
Err
15 0 0 2.5 5 7.5 Gate Resistance (ohms) 10
0
300
600 900 VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W)
0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse
0.08 0.06 0.04 0.02
IGBT
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
4-5
APTGL325DA120D3G - Rev 0
September, 2008
0.1
APTGL325DA120D3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 180 150 120 90 60 30 0 0
Hard switching ZVS ZCS VCE=600V D=50% RG=1.5 TJ=150C Tc=75C
Forward Characteristic of diode 600
450 IF (A)
300
150
TJ=150C TJ=25C
0 240 IC (A) 360 480 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
120
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.9 0.15 0.12 0.09 0.06 0.03 0.7 0.5 0.3 0.1 Diode
0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGL325DA120D3G - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein
September, 2008

▲Up To Search▲

Price & Availability of APTGL325DA120D3G

	To Download APTGL325DA120D3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .